Thermally induced changes of Cu<i>x</i>S films and effect on CdS-Cu<i>x</i>S solar-cell response

Burton, L. C.; Windawi, H.

doi:10.1063/1.322388

Cited by 23 publications

(15 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has long been noted that Cu 2Àx S structural, electronic and optical properties evolve in time in the presence of moist air, especially at elevated temperatures. 34,36 Calculations further suggest that low-chalcocite, even when in equilibrium with bulk Cu, may favor some Cu vacancies that result in free Cu. 37 It has been hypothesized that Cu atoms at grain boundaries and free surfaces may react to form surface species while the high mobility of copper allows the resulting vacancies to cluster into djurleite units.…”

Section: Electronic Stability Under N 2 Atmospherementioning

confidence: 99%

“…This is a relatively low value for Cu 2Àx S which can be correlated with the most efficient Cu 2 S devices. 36 Notably, even under the actively scrubbed nitrogen atmosphere of the glovebox the carrier concentration rises steadily, although at a rate more than an order of magnitude slower than under air exposure (note the log-log scale). In both atmospheres the addition of free charge carriers with time is best t to a power law relationship.…”

Section: Electronic Stability Under N 2 Atmospherementioning

confidence: 99%

See 1 more Smart Citation

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

Martinson

Riha

Thimsen

et al. 2013

Energy Environ. Sci.

View full text Add to dashboard Cite

Copper sulfide films of nanometer thickness are grown by atomic layer deposition (ALD) and their structural and optoelectronic properties investigated as a function of time and storage environment. At temperatures as low as 80 C polycrystalline thin films are synthesized, which index to the stoichiometric (Cu 2 S) chalcocite phase. As-prepared and prior to exposure to room ambient, conductive films are obtained as a result of a high mobility (4 cm 2 V À1 s À1 ) and a relatively moderate p-type doping of 10 18 cm À3 . However, exposure to air results in a rapid rise in conductivity due to heavy p-type doping (>10 20 cm À3 ). The evolving electronic properties in air are correlated with a change in both crystalline phase and optical constants. Surface analysis corroborates a copper deficiency induced by room temperature oxidation in air. Surprisingly, storage in a <0.1 ppm oxygen and water atmosphere significantly slows but does not halt the rise in conductivity with time. However, an Al 2 O 3 overlayeralso grown by ALD-results in significantly lower carrier concentrations as well as dramatically slower carrier addition with time, even under ambient conditions. The implications for future use of Cu 2 S in more efficient (p/n + ) and stable thin film photovoltaics are discussed. Broader contextCopper sulde served as the absorber layer in of one of the rst efficient thin lm photovoltaic stacks. However, large and uncontrollable p-type carrier concentrations resulted in limited efficiency and contributed to unsatisfactory junction stability. Now, the allure of such an ideal solar absorber comprising these earth-abundant and non-toxic elements stimulates new efforts to understand and stabilize device interfaces. Here, the surface of semiconducting chalcocite lms are observed to oxidize in minutes under ambient atmosphere resulting in an orders of magnitude change in conductivity. The effective extraction of copper atoms to the surface of thin lms results in degenerate doping that can be signicantly slowed by storage in an inert environment. We introduce atomic layer deposition of a barrier layer to reduce the intrinsic doping and further slow the aging process, even in air.

show abstract

Section: Electronic Stability Under N 2 Atmospherementioning

confidence: 99%

Section: Electronic Stability Under N 2 Atmospherementioning

confidence: 99%

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

Martinson

Riha

Thimsen

et al. 2013

Energy Environ. Sci.

View full text Add to dashboard Cite

show abstract

“…7. 19 Auger analysis ͑outer most layer͒ of the heated CuS sample indicates Cu/S to be 0.9. These ratios suggest that Cu is in excess and S is relatively deficient in the CuS heated films ͑suggesting Cu ϩ1 formation͒.…”

Section: Surface Chemical Studiesmentioning

confidence: 99%

Processing and characterization of nanometer sized copper sulfide particles

Seal

Bracho

Shukla

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inPerformance of a size-selected nanocluster deposition facility and in situ characterization of grown films by x-ray photoelectron spectroscopy Rev. Sci. Instrum. 85, 065109 (2014); 10.1063/1.4882315CuO three-dimensional flowerlike nanostructures: Controlled synthesis and characterization Synthesis and characterization of self-catalyzed CuO nanorods on Cu ∕ TaN ∕ Si assembly using vacuum-arc Cu deposition and vapor-solid reaction Microstructure, composition, and optical properties of PbTiO 3 thin films prepared by the sol-gel method Nanomaterials have attracted considerable attention in modern-day technology. In this article, sulfide nanoparticles of industrial interest are formed by the sol-gel process using metal chloride precursors dissolved in a mixture of silica gel and organic cellulose network followed by a chemical reaction with hydrogen sulfide gas. Particles are then heated in a vacuum oven. While scanning and transmission electron microscopy are used to study their morphology and structure in the nanometer scale, x-ray photoelectron spectroscopy is employed to understand the bonding chemistry and the stoichiometry of the sulfide particles as a function of H 2 S exposure and heat treatment. The results from this study are expected to show promising applications and production of other oxides, sulfides and their compounds using sol-gel synthesis are indicated.

show abstract

“…As an important non-toxic, earth abundant, highly p-doped semiconductor with its metal-like electrical conductivity, CuS has attracted much attention in recent years to fabricate wide range of optical and electrical devices. [29][30][31][32][33][34] Yuan et al 35 used a CuS thin film as a p-type material in dye sensitized solar cells and achieved significant photoelectric response. Wu et al 36 reported the fabrication of an efficient flexible photovoltaic device based on a Schottky junction between CuS nanotubes and ITO film.…”

Section: Introductionmentioning

confidence: 99%

Optical photoresponse of CuS–n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching

Katiyar

Sinha

Manna

et al. 2013

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

The paper deals with the fabrication of a p-CuS-n-Si nanocone heterojunction based highly sensitive broad band photodetector. Cone-like one dimensional Si nanostructures formed by metal assisted chemical etching, with superior antireflection characteristics have been used as templates for fabrication of the heterojunction. Covellite CuS material was synthesized by a simple chemical reaction for used as target material for the fabrication of p-CuS-n-Si nanocone heterojunctions via pulsed laser ablation. The effect of surface texturing of Si (cone like nanostructure vs. planar) on spectral photoresponse and detection is reported.

show abstract

Thermally induced changes of CuxS films and effect on CdS-CuxS solar-cell response

Cited by 23 publications

References 4 publications

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

Structural, optical, and electronic stability of copper sulfide thin films grown by atomic layer deposition

Processing and characterization of nanometer sized copper sulfide particles

Optical photoresponse of CuS–n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching

Contact Info

Product

Resources

About