The fabrication of radial junction silicon (Si) solar cells using Si wire arrays grown by Au-catalyzed vapor-liquid-solid growth on patterned Si substrates was demonstrated. An important step in the fabrication process is the repeated thermal oxidation and oxide etching of the Si wire arrays. The oxidation cleaning process removes residual catalyst material from the wire tips and exposes additional Au embedded in the material. Using this cleaning process and junction formation through POCl3 thermal diffusion, rectifying p-n junctions were obtained that exhibited an efficiency of 2.3% and open circuit voltages up to 0.5 V under Air Mass 1.5G illumination.

Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p(+) core (Al auto-doping) and thin film deposition of the n(+)-shell at temperatures below 650 °C. Short circuit current densities of 11.7 mA cm(-2) were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p(+)/n(+) doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.