The chemical vapor deposition (CVD) of boron carbide was investigated on a tungsten substrate from a gas mixture of BCl 3 , H 2 , and CH 4 in a dual impinging-jet reactor that was connected to an FT-IR spectrometer for on-line analysis of the reactor effluent stream. During CVD of boron carbide, the formation of BHCl 2 was experimentally verified, and β-rhombohedral B 4 C was formed. Conversion to boron carbide was found to increase with an increase in the BCl 3 /CH 4 ratio. However, conversion to dichloroborane decreased with an increase in the BCl 3 concentration in the inlet gas stream. Kinetic data showed that the B 4 C formation reaction rate is proportional to the 1.85 power of the BCl 3 concentration.
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