This paper describes how thin film capacitance nieasurements helow 2nnr are affected hv an anomalous "h'egative Capacitance Efect" induced by parasitic components that originate /rom the wafer chuck. This inductive effect is observed even though appropriate calihration is executed at the tip.7 oJthe probe needle to remove lhe residual induclance /rom the measurement .system. We explain the mechanism of the "Negative Capacitance Effect" theoreticallv and demonstrate il experinrentally. And we propose a new nrethodolagv for on-wafer C-1' measuremenl.7 that con reduce this induclive effect that originates from sy.vtem parasitics while at the same time expanding the practical frequency range oJmeasurement la IOOMHz.
INTRODUCTIOXIn the efforr to increase the performance of modem semiconductor integrated circuits through the scaling of uansistor dimensions a number of problems have been
Classical chaotic systems are distinguished by their sensitive dependence on initial conditions. The absence of this property in quantum systems has led to a number of proposals for perturbation-based characterizations of quantum chaos, including linear growth of entropy, exponential decay of fidelity, and hypersensitivity to perturbation. All of these accurately predict chaos in the classical limit, but it is not clear that they behave the same far from the classical realm. We investigate the dynamics of a family of quantizations of the baker's map, which range from a highly entangling unitary transformation to an essentially trivial shift map. Linear entropy growth and fidelity decay are exhibited by this entire family of maps, but hypersensitivity distinguishes between the simple dynamics of the trivial shift map and the more complicated dynamics of the other quantizations. This conclusion is supported by an analytical argument for short times and numerical evidence at later times.PACS number: 05.45.Mt
Carbon nanotube (CNT) gas sensors for NOx gas detection were prepared. CNTs were
grown on an Al2O3 substrate with interdigital Pt-electrodes (Al2O3 ceramic substrate) using both
pulsed laser deposition (PLD) and thermal chemical vapor deposition (CVD) method. In this
method, Al buffer layer and Fe catalytic thin film were prepared on the substrate by PLD method
and then CNTs were grown by thermal CVD method. Surface images of CNTs on the substrates
were observed by SEM, and the gas sensing property specific to NO gas was measured. Resistance
of the prepared CNTs gas sensor decreased with increase of sensor temperature, and it decreased
with increase of NO gas concentration at room temperature.
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