International Conference on Microelectronic Test Structures, 2003.
DOI: 10.1109/icmts.2003.1197461
|View full text |Cite
|
Sign up to set email alerts
|

The negative capacitance effect on the C-V measurement of ultra thin gate dielectrics induced by the stray capacitance of the measurement system

Abstract: This paper describes how thin film capacitance nieasurements helow 2nnr are affected hv an anomalous "h'egative Capacitance Efect" induced by parasitic components that originate /rom the wafer chuck. This inductive effect is observed even though appropriate calihration is executed at the tip.7 oJthe probe needle to remove lhe residual induclance /rom the measurement .system. We explain the mechanism of the "Negative Capacitance Effect" theoreticallv and demonstrate il experinrentally. And we propose a new nret… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
10
0

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(13 citation statements)
references
References 5 publications
0
10
0
Order By: Relevance
“…C g depends on the volume of the material sample and its distance to ground. Some reported values are 10 pF for measurements in sapphire [12], 100 pF for measurements in semiconductors [13], and from 100 pF to 4 nF for measurements in the human body [25].…”
Section: B Equivalent Circuitmentioning
confidence: 98%
See 2 more Smart Citations
“…C g depends on the volume of the material sample and its distance to ground. Some reported values are 10 pF for measurements in sapphire [12], 100 pF for measurements in semiconductors [13], and from 100 pF to 4 nF for measurements in the human body [25].…”
Section: B Equivalent Circuitmentioning
confidence: 98%
“…This residual inductance is used in metrology to compensate for the parallel stray capacitance of resistor standards [16]. Inductive loops in Cole-Cole diagrams [12] and negative capacitances [13] may have similar causes but, to the best of our knowledge, no detailed analysis of these problems is available.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…EOT were evaluated from high frequency C-V measurements [31,32]. I g -V g measurements were conducted on condition that V d = V s = 0 V and the body was floating.…”
Section: Methodsmentioning
confidence: 99%
“…6). The insulator between the wafer and the chuck reduces the complicated coupling between the wafer chuck and the ground, and results in improved measurements at higher frequencies [5].…”
Section: C-v Extraction Techniquesmentioning
confidence: 99%