SimulationDistortion simulations of GaAs MESFETs based on physical model and applying harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone inter-modulation distortion characteristics.
We have developed novel selective thermal oxidation process for AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) and realized extremely high device isolation and high drain breakdown voltage device of over 1OOV The leakage current of device isolation between two active islands exhibited drastic reduction of 5 order of magnitude smaller than that of conventional mesa isolation process. Moreover, the fabricated 1.3um-gatelength AlGaN/GaN HFETs exhibited maximum transconductance ( g m d of 130mS/mm, maximum drain current (I,-) of SOOmA/mm and excellent pinch off characteristics at high drain voltage of over 120V.heterostructure is that the density of 2DEG is extremely high, more than 1 X lOI3 by the piezoelectric effect and spontaneous polarization effects(3). One-order magnitude higher output power can be expected by simply changing the material.
We report on the lattice-mismatched growth and electrical properties of In0.5Ga0.5As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350°C. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm2/V·s was obtained with an electron concentration of 3×1012/cm2. It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained.
Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have population inversion sufficient for lasing. The possibility of lasing at the higher temperature is briefly discussed.
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