Chemically deposited thin films of bismuth sulfide (0.13 ~m) and copper sulfide (0.3 p~m) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films

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Deposition of CdSe thin films from chemical baths containing cadmium citrate or cadmium tartrate complex ions and using N,N-dimethylse]enourea as the source of selenide is presented. Good quality thin films of thickness in the 0.I-0.5 ~m range were deposited at 24 or 50~ The as-prepared films are of poor crystallinity. On annealing in air at 450~ for 1 h, well-defined diffraction peaks matching with the hexagonal phase of CdSe are observed, These films have electrical conductivities ((;dark) ~I0~ s ~-I cm-1 and are only weakly photosensitive, However, the photosensitivity improves to ~i0 ~ on annealing in air at 450 C. Ion-exchange reactions of the films in dilute HgCI2 solutions lead to ~d,rk ~ 112 -~ cm i (n=type) with low photosensitivities. Annealing of these films at temperatures > 200~ leads to a reduction in ~d,rk while it enhances the photosensitivity. Immersion of the CdSe films in dilute CuCI2 solution makes the films p-type, r ~ 0.I ~-1 cm i. Annealing of these films at temperatures >200 C causes degradation of the films. XPS depth profiles of the films are presented to illustrate the ion-exchange reactions.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-04-12 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2015-04-12 to IP