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BaTiO3 positive temperature coefficient of resistance (PTCR) specimens were made from commercial BaTiO3 which was mixed with 0.35 mol. % of Ho2O3 to make it semiconducting and 0.07 mol. % of MnCO3. After sintering at 1320 °C the samples were annealed in batches at 1220 °C for various periods between 0 and 5 h. The effect of Mn was studied by making direct comparison with previous results obtained from Mn free but otherwise identical specimens. Room-temperature dielectric measurements in the audio and radio frequency ranges revealed that Mn had a negligible effect on the grain bulk resistance. Mn was found to result in an increase in the minimum and maximum values of the resistivity, the temperature at which the resistivity is a maximum and the slope of the resistivity-temperature characteristic in the transition region, all of which were attributed to an enhancement of the potential barrier at the grain boundaries. The acceptor state energy of the Mn-doped samples was found to be ∼1.4 eV, while a lower value was obtained for Mn-free material (∼1.12 eV). The effective concentration of Mn acceptors was observed to increase with the annealing time. To explain this behavior a thin Mn-rich boundary layer was assumed to exist, within which there was partial compensation of the Mn ions due to the formation of ionized oxygen vacancies. During annealing in air at 1220 °C, oxidation takes place and more of these vacancies are filled resulting in an increase in the effective Mn concentration. This model is also capable of explaining other phenomena such as the disappearance of the PTCR effect in reduced samples and the effects of cooling rate and quenching on the PTCR behavior.

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