Dependence of   thin film solar cell characteristics on the processing conditions

Al‐Allak, H. M.; Brinkman, A.W.; Richter, H.; Bonnet, D.

doi:10.1016/0022-0248(95)00855-1

Cited by 54 publications

(24 citation statements)

References 6 publications

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“…[136][137][138] A decrease in interface states after the CdCl 2 treatment is commonly reported, that changes the mechanism of current transport from tunneling/interface recombination to junction recombination in case of CSS deposition. 136,139 Whether this is due to S diffusion or Cl incorporation is unclear. The diffusion of S may shift the p-n junction away from the metallurgical interface into the CdTe absorber and decrease the CdTe band gap.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

353

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

353

192

View full text Add to dashboard Cite

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“…Cadmium Telluride (CdTe) and its alloys are important materials for optoelectronic applications such as solar cells [1,2] and Xand c-ray semiconductor detectors [3][4][5]. The performance of these materials depends critically on their electrical properties, which are dominated by the formation of defects, including both point and extended defects.…”

Section: Introductionmentioning

confidence: 99%

LDA+U/GGA+U calculations of structural and electronic properties of CdTe: Dependence on the effective U parameter

Chen

Zhu

et al. 2015

Computational Materials Science

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a b s t r a c tWe present a detailed assessment of the structural and electronic properties of CdTe calculated by density functional theory (DFT) with on-site Coulomb self-interaction potentials (LDA+U/GGA+U) on the Cd 4d band. We systematically calculate the lattice constants, bulk moduli, elastic constants, band structure, and density of states as a function of the U value, and compare the results with those calculated by using standard LDA/GGA and the hybrid functional (HSE06). Our study gives a more accurate account of the strong localization effect of Cd 4d electrons onto the overall electronic structure, in particular to the nature of localized Cd 4d derived bands and delocalized Te 5s derived bands and the coupling between them. We find that the s-d coupling is significant, which is underestimated within conventional DFT calculations (showing a single s-like peak, in disagreement with the experiments). LDA+U removes this discrepancy by shifting down the Cd-4d band closer to the Te-5s band, enhancing the s-d coupling, and leading to the appearance of two s-like peaks, which perfectly explains the so-called low intensity ''shoulder'' on the high-energy side of the Cd-4d peak in experimental spectra. Moreover, our results indicate LDA+U reveals an much more acceptable agreement with experiment at a adequate U than HSE06 does. A well balanced choice of U within LDA+U scheme is proposed to be at 7 eV.

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“…Thin absorber film can reduce the material cost providing high specific power (ratio of output power to the weight), which makes it attractive for space applications. CdTe/CdS solar cells can be prepared using a variety of deposition techniques like screen printing, radio frequency (RF) sputtering, vacuum evaporation, metal organic chemical vapor deposition (MOCVD), spray pyrolysis, close spaced sublimation (CSS) and electrodeposition (ED) [3][4][5][6][7]. Each technique has its own advantages and shortcomings.…”

Section: Introductionmentioning

confidence: 99%