In this work, we report the growth of Copper Zinc Tin Sulfide (CZTS) nano-rods on CZTS thin films. The nano-structures were fabricated using an anodized aluminum oxide (AAO) growth mask. The metallic constituents of CZTS were co-electrodeposited within the AAO nano-pores using a choline-based ionic liquid as the electrolyte. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 4 hours in nitrogen ambient. The properties of the CZTS thin film grown in the process were studied by X-ray diffraction (XRD) analysis. The results indicated that the film has a stannite structure with preferred grain orientation along (112). The nano-rods fabricated using this technique show that the diameters of the rods can be easily varied from 150–250 nm by changing the potential in the anodization process. The morphology and crystal structure of CZTS nano-rods were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM).
Highly c-and a-oriented LiNbO 3 films were deposited on a-sapphire substrates by pulsed laser deposition. The film microstructure and crystal orientation were studied by transmission electron microscopy, and the mechanism forming the different film orientations was interpreted in terms of the adatom energy and oxygen pressures. The electron-energy-loss functions derived from the electron-energy-loss spectra exhibit characteristic energy-loss peaks at about 7.0, 11.0, and 14.0 eV. These peaks correspond to electron transitions from the maximum density of the states in the valence band of O 2p to the split conduction band. The dielectric functions of the LiNbO 3 films were also derived from the energy-loss function.
We report the growth of Cu2ZnSnS4 (CZTS) thin films by electrodeposition in ionic liquid. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 2 hours. The X-ray diffraction analysis indicated that the film has a stannite structure with preferred grain orientation along (112). Photo-absorption measurement of the sample was performed from 500 nm to 990 nm. It is found that the energy bandgap of the film is about 1.49eV and the absorption coefficient is found to be of the order of 104cm-1.
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