Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids

Chan, Ching Yuen; Lam, H.; Surya, C.

doi:10.1016/j.solmat.2009.09.003

Cited by 186 publications

(75 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…-it is a compound whose intrinsic point defects lead to p-type semiconductor behavior; -it has a direct bandgap and an absorption coefficient >10 4 cm −1 , which is suitable for thin film photovoltaics applications [15][16][17]; -its band gap has been predicted [18] to be 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 and evidences of the bandgap tunability have been found via the variations of V OC [19], as well as direct measurements of the variation of the bandgap between 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 [20][21][22][23][24]. The band gap of CZTS can also be tuned by incorporation of Ge, Ge-containing materials having smaller bandgap than their Ge-free counterparts [25].…”

Section: Advantages Of Cztsmentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

View full text Add to dashboard Cite

In the years to come, electricity production is bound to increase, and Cu2ZnSn(S, Se)4 (CZTS) compounds, due to their suitability to thin-film solar cells, could be a means to fulfill the demand. After explaining the reasons of the sudden interest of the CIGS scientific community for CZTS solar cells, this paper reviews recent papers published on the subject of kësterites-based solar cells. After a description of crystallographic and optoelectronic properties, including CZTS crystalline structure, defect formation and metal composition, this review paper focuses on CZTS synthesis processes and device properties. Synthesis strategies, including one-or two-step processes, deposition temperature, binary formation control via atmosphere control and their effect on device properties are discussed.

show abstract

Section: Advantages Of Cztsmentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

View full text Add to dashboard Cite

show abstract

“…The Cu 2 ZnSnS 4 (CZTS) solar cell, which gradually attracts attention from people because of its excellent characteristics with being low cost, the solar spectrum matching (1.4 to 1.5 eV), the high light absorption coefficient (greater than 10 4 cm -1 ) and the environment friendly, which has become one of the best choices for solar cell absorption materials [1~3] . The preparation methods for CZTS thin film including magnetron sputtering [4] , vacuum evaporation [5] , electrochemical deposition [6] , sol gel [7] , spray pyrolysis [8] and so on. Through the tireless efforts of the researchers, the conversion efficiency of CZTS thin film solar cell was improved steadily.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sulfurization Time on the Structural and Optical Properties of Cu2ZnSnS4 Thin Films

Liu¹,

Hao²,

Chang³

et al. 2017

dteees

View full text Add to dashboard Cite

Abstract. Cu 2 ZnSnS 4 (CZTS) thin films were successfully prepared by magnetron sputtering. The composition, phase structure, surface morphology and optical properties of the CZTS thin films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and ultraviolet visible spectrophotometer (UV-VIS). The result shows that: when the sulfurization time was 15 minutes, the atomic ratio was closed to the stoichiometric ratio of CZTS thin films, and the surface morphology of the film was homogeneous and compacted with the good uniformity. The grown films exhibit strong preferential orientation along (112) plane. As-obtained CZTS films have obvious absorptions under the visible light, and after the sufficient sulfurization, the band gap remains constant with the increase of sulfurization time.

show abstract

“…CZTSS has a direct band gap of 1.45 1.6 eV and an optical absorption coefficient of around 10 5 cm -1 [1,2]. Recently several groups reported CZTSS thin-films prepared by variety of fabrication methods, namely sputtering [2][3][4][5], physical vapor deposition [6][7][8][9][10][11], solution-particle approach [12][13][14], photochemical deposition [15], sol-gel method [16], screen-printing [17], and electroplating [18][19][20][21][22][23][24][25][26]. The best conversion efficiency of the CZTS solar cell is reported to be 11.1% using ink-based solution-particle approach [27].…”

Section: Introductionmentioning

confidence: 99%

3.6%-CZTSS Device Fabricated From Ionic Liquid Electrodeposited Sn Layer

Bhattacharya¹

2014

TOSURSJ

View full text Add to dashboard Cite

Cu/Sn/Zn stacked layers were electrodeposited and subsequently annealed in a tube furnace in elemental sulfur and selenium at 570ºC. Cyclic voltammogram of Sn-salt in ionic liquid was recorded. Thin films were characterized by inductively coupled plasma-mass spectrometry (ICP-MS), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). The device was characterized by current-voltage (I-V) and quantum efficiency (QE). The device fabricated using electrodeposited precursor film resulted in efficiencies of 3.6%.

show abstract

Preparation of Cu2ZnSnS4 films by electrodeposition using ionic liquids

Cited by 186 publications

References 26 publications

Kësterite thin films for photovoltaics : a review

Kësterite thin films for photovoltaics : a review

Effect of Sulfurization Time on the Structural and Optical Properties of Cu2ZnSnS4 Thin Films

3.6%-CZTSS Device Fabricated From Ionic Liquid Electrodeposited Sn Layer

Contact Info

Product

Resources

About