Silicon n-on-p photodiodes with 100 % internal quantum efficiency have been studied in the 160 nm to 254 nm spectral range. Preliminary values have been determined for the quantum yield of silicon at these wavelengths. Using these values, a trap detector is presented for absolute flux measurement in this region. The stability under intense 193 nm irradiation, a property of importance in lithography and in photorefractive keratectomy, has been measured, and the diodes tested were found to be several orders of magnitude more stable than p-on-n diodes tested by other investigators at this wavelength. Spatial nonuniformities of the n-on-p diodes were found to be less than 1 % at wavelengths of 254 nm and 161 nm.

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