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We propose tunnel junctions with type-II heterostructures to reduce the electrical resistance of vertical-cavity surface-emitting lasers. We fabricated the type-II tunnel junctions on GaAs substrates, which consist of highly C-doped GaAsSb on the p side and highly Si-doped InGaAs on the n side. We achieved an extremely low specific resistance of 4×10−6Ωcm2, which corresponded to a resistance of 20Ω for an aperture 5μm in diameter. The specific resistance of the type-II tunnel junction was about 40% smaller than that of the type-I tunnel junction.

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