Thin films of In2Se3-3xTe3x compounds have been
synthesized by annealing, in constant argon flow, a multilayer
structure of indium, selenium and tellurium, sequentially deposited.
The films have been characterized by x-ray diffraction (XRD),
electron microprobe analysis and x-ray photoelectron
spectroscopy (XPS) measurements. These studies have shown that the
thin films after annealing are stoichiometric with In at.%/(Se + Te) at.% = 2/3. Qualitative XPS analyses have provided
evidence that the surface of the films is chalcogen deficient. XRD
measurements have shown that the thin films are crystallized in the
hexagonal structure of γ-In2Se3. The
transmission curves obtained by optical measurements show that the
absorption threshold is about 1.8 eV when x varies between 0 and
0.25. The photoconductivity measurements have shown that the
presence of some at.% of Te (0.8 at.%-8 at.%) improves the
photocurrent of the films. The photocurrent is increased by more
than five orders of magnitude in the presence of 8 at.% of Te.
These properties make In2Se3-3xTe3x compounds very
interesting materials as regards use as absorbers in thin-film solar
cells.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.