ZnSeIZnMnSe MOW structures are grown by MBE. In situ RHEED control allows one to lock the growth cycle on the phase of the RHEED oscillations so that lattice plane completion is achieved independent of beam flux fluctuations and other irregularities. The band-edge resonant optical properties of the structures are dominated by sharp and pronounced excitonic features. The influence of strain and confinement on these excitons. their localization and interaction with phonons are discussed.
The Pockels effect is used to modulate and switch blue-green light by means of MBE-grown ZnSe waveguides with cladding layers of (Zn,Mn)Se on n-GaAs substrates. In a retarder geometry, the strained birefringent planar waveguide exhibits a contrast ratio larger than 80:1 at 2.485 eV. When the electric field is applied via stripe contacts on the top cladding layer, the waveguiding for TE-polarized light can be confined in the lateral direction. In the centre of the lateral waveguide channel, the contrast ratio is better than 16:1 at 2.48 eV. Switching between adjacent channels is demonstrated with a contrast ratio better than 5:1.
Electro-refractive modulation in the blue-green spectral range is demonstrated in strained, MBE-grown ZnSe waveguides with cladding layers of ZnMnSe on n-GaAs substrates. Utilizing the Pockels effect in Schottky-contacted structures with built-in birefringence, a contrast ratio better than 80:1 at 2.485 eV is achieved. The rise time of (4.7±0.5) ns is RC limited.
A set of high quality Zn1−xCdxSe/ZnSe quantum well structures with various well widths and Cd contents as well as Zn1−xCdxSe epilayers are grown by molecular beam epitaxy. Their optical properties are investigated by measuring photoluminescence, reflection, and transmission as a function of a vertically applied electric field. The quantum‐confined Stark effect is observed at 5 K and a change in transmission of more than 30% achieved at 300 K. By means of numerical model calculations, the underlying electro‐absorption and electro‐refraction spectra are deduced and the field‐induced change of the relevant exciton parameters (resonance energy, oscillator strength, broadening) derived.
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