Growth and optical properties of ZnSe/ZnMnSe quantum structures

Abstract

ZnSeIZnMnSe MOW structures are grown by MBE. In situ RHEED control allows one to lock the growth cycle on the phase of the RHEED oscillations so that lattice plane completion is achieved independent of beam flux fluctuations and other irregularities. The band-edge resonant optical properties of the structures are dominated by sharp and pronounced excitonic features. The influence of strain and confinement on these excitons. their localization and interaction with phonons are discussed.

RETRACTED: Investigation on manganese-doped ZnSe QDs prepared from self-assembled template of reverse micelle

“…Besides similar application as undoped QDs, DMS quantum dots can provide a useful model system for the new field of spintronics. Until now, the most popular approach to prepare Mn 2 + -doped II-VI QDs is by molecular beam epitaxy growth [12][13][14][15], metal organic chemical vapor deposition, pulsed laser deposition, and more recently hotinjection in colloid solution [16,17].…”

Infrared and Raman spectroscopic study ofZn1−xMnxSematerials grown by molecu

“…6,7 ZnSe/Zn 1Ϫx Mn x Se quantum well ͑QW͒ and superlattice ͑SL͒ structures are promising for next generation electro-optical and photonic devices. [8][9][10] Bulk Zn 1Ϫx Mn x Se has been prepared previously by the Bridgman method with a zinc-blende structure for xϽ0.35 and a wurtzite structure for 0.35ϽxϽ0.57. 11 Efforts have been made on the growth of epitaxial Zn 1Ϫx Mn x Se films by various techniques, such as molecular beam epitaxy ͑MBE͒, metalorganic chemical vapor deposition ͑MOCVD͒, pulsed laser evaporation and epitaxy ͑PLEE͒, atomic layer epitaxy ͑ALE͒ and radio frequency sputtering.…”

“…11 Efforts have been made on the growth of epitaxial Zn 1Ϫx Mn x Se films by various techniques, such as molecular beam epitaxy ͑MBE͒, metalorganic chemical vapor deposition ͑MOCVD͒, pulsed laser evaporation and epitaxy ͑PLEE͒, atomic layer epitaxy ͑ALE͒ and radio frequency sputtering. 12 Using the MBE technique, thick ͑1-3 m͒ Zn 1Ϫx Mn x Se epilayers with zincblende structure over the 0рxр0.66 composition range, 13 ZnSe/Zn 1Ϫx Mn x Se QW and SL structures, [6][7][8][9][10] and ZnSe/ MnSe superlattices 14 with both zinc-blende ZnSe and MnSe have also been successfully grown. Based on the fact that the atomic radius of Mn ͑1.79 Å͒ is larger than that of Zn ͑1.53 Å͒, it would be difficult to dope a large concentration of Mn atoms into the lattice of as-deposited Zn 1Ϫx Mn x Se layers.…”

“…12 More epitaxial Zn 1Ϫx Mn x Se films and microstructures reported in recent years ͑after 1990͒ were focused in the low Mn concentrations. 5,6,7,9,10,12,15,16 Efforts in growing high Mn composition and high quality Zn 1Ϫx Mn x Se materials and structures are needed for the further development of these promising materials and microstructures.…”

Determination of the Deformation State of (Zn,Mn)Se/ZnSe Multilayers

“…Thus, all investigated samples contained nearly the same manganese concentration. The growth conditions have been described in detail elsewhere (Streller et al, 1995).…”