We have demonstrated that the developed process has a breakdown voltage of higher than 6OOV with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical smcture in the LIGBTs shcpws the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5V, 0.8pm CMOS process.
IntroductionSO1 technology is becoming the most amactive faas an integrated chip because high voltage dlevices cain be integrated on a chip with CMOS circuit by using umch isolation. Recently an LIGBT fabricated on1 a 1.5pm active layer of SO1 with 3pm buried-oxide showed high switching speed without life-time control, but it had only 440V
rV1SlXACI' -One of target,s for developing high performance IGBT is to accomplish a superior trade-off between the on-state voltage and the turn-off loss. So far, various lifetime control techniques such as, heavy metal diffusion and proton irradiation have been examined for realizing desirable trade-off for IGBTs. Recently, it was reported that proton irradiation resulted in better trade-off for IGBT than electron irradiation. Because in the former, carrier recombination centers can be formed in more localized area around the projection range t.han in the latter. Now, we studied here, a partial lifetime control f o r IGBTs which is performed by irradiating helium ions through a stainless steel mask, which localize the presence of carrier recombination centers in lateral direction as well as in depth profile. By applying this technique, the turn-off loss of IGBTs was reduced, at most, to 41% of that by the conventional one, while the on-state voltage was kept equivalent.
IhTRODUflIONAithough, reduction of the carrier lifetime in silicon enhances the turn-off switching speed of power devices such as IGBTs and GTOs with bipolar conduction, the on-state voltage during conduction increases with a decreases of the carrier lifetime, so t,hat there is a trade-off between the turn-off time ( o r loss) and the forward volt.age drop (11. Therefore, superior trade-off is necessary for accomplishing high performance in these devices. One of key technologies for improving the trade-off is carrier lifetime control technology.So far, various lifetime control techniques such as heavy metal diffusion and electron irradiation have been examined [ Z ] . 7'hese CH2987-6/91/0000-0187 $1.00 01991 IEEE tecliniques form carrier recombination centers d ] l of t,he device. Recently, it was report
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