Switching characteristic of Si-IEGTs and SiC-PiN diodes pair connected in series

Sung, Ki Hyuk; Akiyama, H.; Takao, Kazuto; Kanai, Takeo; Tanaka, Yasunori; Ohashi, Hiromichi

doi:10.1109/ipec.2010.5543850

Cited by 11 publications

(3 citation statements)

References 7 publications

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“…Even though the voltage unbalance can be reduced by the improvement of main circuit design at some level [9], active voltage control is more attractive because the disturbance of the converter cannot be easily observed and active control can improve the system stiffness. Some other active control strategies have been published in [7], [10], and [11].…”

Section: Introductionmentioning

confidence: 99%

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Lü

Zhao

et al. 2015

IEEE Trans. Power Electron.

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Transient voltage unbalance is the major problem that limits the application of series-connected IGBTs in highvoltage and high-power converters. Asynchronous gate delay causes series-connected IGBTs not to turn-on and turn-off at the same time resulting in severely unbalanced voltage sharing. An active voltage balancing control technique is proposed in this paper to solve the asynchronous gate delay problem. By sampling the feedback signal caused by unbalanced voltage sharing, the microcontroller generates a time delay for the gate driver to compensate the asynchronous gate delay. The most vital part of active voltage balancing control, the status feedback circuit, is also discussed in detail in this paper. The function of the status feedback circuit and the effect of active voltage balancing control are verified in a two series-connected HV-IGBTs platform in rated operation (5 kV bus voltage and 600 A load current).

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Section: Introductionmentioning

confidence: 99%

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Lü

Zhao

et al. 2015

IEEE Trans. Power Electron.

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“…Drainsource side voltage balancing circuits are connected across the drain and source for each semiconductor power device. Circuits of this category include three different types, namely, the passive snubber circuit [5]- [7], the resonant snubber circuit [8] and the clamping circuit [9], [10]. The voltage balancing circuits of gate side category include active control circuit [11]- [13], synchronous control circuit [14], [15], and active clamping circuit [16]- [20].…”

Section: Introductionmentioning

confidence: 99%

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Cheng

Xiao

et al. 2014

IEEE Trans. Power Electron.

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In this paper, a new series connection topology is introduced for silicon carbide (SiC) MOSFETs. In the topology, with a single external gate drive, three series-connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated. A 3600 V/80 A series-parallel-connected configuration with three rows in a series and two branches in parallel is constructed with six 1200 V/40 A discrete SiC MOSFETs. Switching behavior of the configuration is completed at 2300 V/78 A. Experimental results verify the validity and feasibility of the proposed topology. Analysis based on experimental results for the circuit switching speed and switching losses is given. Finally, such a series-parallel-connected circuit is integrated in a SiC MOSFETs module, capable of 3600 V/80 A. The switching characteristics of the module are compared to the discrete configuration.

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“…High voltage SiC-PiN diodes have extremely low reverse recovery current and low switching loss characteristics compared to those of conventional high voltage Si-PiN diodes. In addition, a high speed hard switching can be available for the further reduction of the turn-on losses of Si-IEGTs [8], because the turn-off peak power of SiC-PiN diodes is much lower than that of Si-PiN 978-1-4673-0803-8/12/$31.00 ©2012 IEEE diodes. Therefore, the hybrid pairs have the potential to increase switching frequency of medium-voltage power converters.…”

Section: Introductionmentioning

confidence: 99%

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

Takao

Wãda

Sung

et al. 2012

2012 IEEE Energy Conversion Congress and Exposition (ECCE)

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A new 4.5 kV-400 A module using SiC-PiN diodes and Si-IEGTs hybrid pair has been developed. The hybrid pair module is designed to realize high-frequency switching operation of high power medium-voltage power converters (1-10MVA, voltage range 3…10kV). In order to realize a low switching loss operation of the hybrid pair module, a hard gate driving with low gate resistor has been employed. Switching characteristics of the hybrid pair are evaluated experimentally and compared with that of a conventional 4.5 kV Si-IEGT and Si-PiN diode pair (All Si). The results show that the reverse recovery loss of diode and the turn-on loss of the Si-IEGT are reduced up to 95% and 60%, respectively. As a result, the total switching loss (i.e. turn-on and turn-off losses of the Si-IEGT plus reverse recovery loss of the diode) can be reduced up to 49% with the hybrid pair. The developed hybrid pair modules are applied to a prototype high power converter, and a highfrequency switching operation of 4 kHz has been successfully demonstrated.

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Switching characteristic of Si-IEGTs and SiC-PiN diodes pair connected in series

Cited by 11 publications

References 7 publications

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

Series-Connected HV-IGBTs Using Active Voltage Balancing Control With Status Feedback Circuit

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

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