A new design of gain clamped L-band EDFA with improved gain characteristics and high tuneability has been proposed and demonstrated. The design utilizes two C/L-band WSCs to create a laser in the ring cavity for gain clamping. The clamped-gain level is controlled to be in the range from 4.7 to 21.3 dB by varying the VOA settings from 0 to 24 dB. At VOA ϭ 8 dB, the amplifier gain is clamped at 11.5 dB with gain variation of less than 0.1 dB from input-signal power of Ϫ40 to Ϫ6 dBm. However, the proposed gain-clamped amplifier suffers noise-figure degradation, as compared to the open-ring amplifier, due to the intense ring-laser light, which counter-propagates through the EDF. At the VOA setting of 8 dB, a noise-figure penalty of 1.8 dB is obtained within the dynamic input-signal-power range. This amplifier is expected to solve the gain-variation problem in WDM systems. GHz): gain of 3.88 -9.28 dBi and broad radiation pattern.
DESIGN OF MULTIPLE U-SHAPED SLOT MICROSTRIP PATCH ANTENNA FOR 5-GHz BAND WLANs
angular coaxial transmission line structures with inherently low loss, high isolation, and very small turn radius, as compared to even the smallest commercial circular coax. A pleasant surprise is the relatively small deleterious effect of the structural nickel and of the sacrificial-metal release holes of the EFAB process. Clearly, more attention must be paid to the design of the GSG contacts, and the RF performance would probably improve through the use of a higher conductivity metal such as copper. However, this demonstration helps pave the way toward more sophisticated and highly integrated passive components, such as directional couplers and hybrids in analog signal-processing and beam-forming networks.
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