Underwater lighting is important for the exploration of the underwater world in different areas. It is of great significance for developing underwater emitters with high penetrability, high luminous efficiency, good anti‐water stability, and environmental friendliness. Stable lead‐free perovskite luminescent materials, represented by vacancy‐ordered double perovskites, are worthy of research because they can almost meet the above requirements. Here, lead‐free perovskite variant solid solutions with the formula of Cs2Sn1−xTexCl6 are reported. Upon the exchange of Sn/Te ions, strong Jahn–Teller distortion of octahedra occurs in the lattice structure. The combination of Te luminescent center and Jahn–Teller‐like self‐trapped excitons gives this material yellow‐green luminescence with a wavelength of 580 nm and a high photoluminescence quantum yield of 95.4%. Moreover, these solid solutions can withstand the extreme conditions of immersion in water probably due to the formation of amorphous alteration phase. Such good anti‐water stability is also supported by the molecule dynamics simulation result that no reaction occurs on the water/Cs2SnCl6 interface. The high luminous, suitable wavelength, and good anti‐water stability enable the solid solutions suitable for the application for underwater lighting.

Halide double perovskites A2B­(I)­B­(III)­X6, in which monovalent B­(I) and trivalent B­(III) cations are arranged in the B-sites of the perovskite structure with a rock-salt ordering, have attracted substantial interest in the field of optoelectronics. However, the rock-salt ordering generally leads to low electronic dimensionality, with relatively large bandgaps and large carrier effective masses. In this work, we demonstrate, by density functional theory (DFT) calculations, that the electronic dimensionality and thus the electronic properties of halide double perovskites can be effectively modulated by manipulating the arrangement of the B-site cations. Through symmetry analysis and DFT calculations, we propose a family of halide double perovskites A2B­(I)­B­(II)­X5 where the B-site cations adopt a columnar-ordered arrangement. Among the considered compounds, Cs2AgPdCl5, Cs2AgPdBr5, and Cs2AgPtCl5 were successfully synthesized as the first examples of the B-site columnar-ordered halide double perovskites. These compounds exhibit small bandgaps of 1.33–1.77 eV that are suitable for visible light absorption, small carrier effective masses along the octahedra chains, and good thermal and air stability. Our work provides a prototype double perovskite structure to incorporate cations in +1 and +2 oxidation states, which may significantly expand the large family of the halide double perovskites and offer a platform to explore prospective optoelectronic semiconductors.

Zinc oxide (ZnO) nanoparticles are widely used as electron- transport layer (ETL) materials in organic solar cells and are considered to be the candidate with the most potential for ETLs in roll-to-roll (R2R)-printed photovoltaics. However, the tendency of the nanoparticles to aggregate reduces the stability of the metal oxide inks and creates many surface defects, which is a major barrier to its printing application. With the aim of improving the stability of metal oxide nanoparticle dispersions and suppressing the formation of surface defects, we prepared 3-aminopropyltrimethoxysilane (APTMS)-capped ZnO (ZnO@APTMS) nanoparticles through surface ligand exchange. The ZnO@APTMS nanoparticles exhibited excellent dispersibility in ethanol, an environmentally friendly solvent, and remained stable in air for at least one year without any aggregation. The capping of the ZnO nanoparticles with APTMS also reduced the number of surface-adsorbed oxygen defects, improved the charge transfer efficiency, and suppressed the light-soaking effect. The thickness of the ZnO@APTMS ETL could reach 100 nm without an obvious decrease in the performance. Large-area APTMS-modified ZnO films were successfully fabricated through roll-to-roll microgravure printing and exhibited good performance in flexible organic solar cells. This work demonstrated the distinct advantages of this ZnO@APTMS ETL as a potential buffer layer for printed organic electronics.