In this work, a rapid and sensitive thin‐layer chromatography combined with surface‐enhanced Raman spectroscopy method was established for rapid detection of benzidine and 4‐aminobiphenyl in migration from food contact materials based on Au nanoparticle doped metal‐organic framework. Benzidine and 4‐aminobiphenyl were firstly separated by thin‐layer chromatography to solve the limitation of their overlapping Raman peaks. Then the target molecules were monitored by adding AuNPs/MIL‐101(Cr) on the sample spots. Under the optimum conditions, the concentration of benzidine and 4‐aminobiphenyl can be quantitatively measured in the range of 2.0‐20.0 and1.0‐15.0 μg/L, respectively with good linear relationship, and the limits of detection were 0.21 and 0.23 μg/L, respectively. Furthermore, the developed method was applied to analyze benzidine and 4‐aminobiphenyl in migration of different food contact materials. The recoveries of benzidine and 4‐aminobiphenyl for migration of food contact materials, including paper cups, polypropylene food containers, and polyethylene glycol terephthalate bottles, were 80.6‐116.0 and 80.7‐118% with relative standard deviations of 1.1‐9.1 and 3.1‐9.9%, respectively. Surface‐enhanced Raman scattering detection was performed conveniently in the on‐plate mode without additional elution process. The method shows great potential in rapid monitoring of hazardous substances with overlapping characteristic Raman peaks in food contact materials.
Embedded silicon germanium (e-SiGe) technology in PMOS source/drain area is a trend for advanced CMOS process development. Especially when device gate length reach 28nm or below, sigma shaped trench in PMOS S/D area along with higher germanium and boron concentrations in the SiGe film are needed to improve PMOS channel hole mobility and device Ion/Ioff performance. However, selective epitaxy of SiGe:B will be increasingly challenging as germanium and in-situ boron concentrations increase. The biggest problem is the ball defect showing up after selective epitaxy SiGe processes, which is one of the major killers for device yield.In this paper, we investigated the impact of different wet clean and selective epitaxy conditions on SiGe process defects. For the wet clean experiment, one additional clean step was added to clean the wafer surface after dry etch & wet etch to form the sigma shape trench, followed by chemical to removal of native oxide followed by SiGe: B process. This way we can get best ball defect performance. For selective epitaxy process, seed, bulk & cap layers condition were adjusted. Finally, we found that the cap layer is the most significant factor that could produce SiGe ball defect. By SiGe ball defect reduction, device yield performance has a great improvement.
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