Lead-free piezoelectric ceramics, with the nominal composition of 0.948(K0.5Na0.5)NbO3–0.052LiSbO3 (KNN-LS5.2), were synthesized by conventional solid-state sintering, and the piezoelectric and electromechanical properties were characterized as a function of temperature. The Curie temperature of the KNN based perovskite material was found to be 368°C with an orthorhombic-tetragonal polymorphic phase transition (TO-T) temperature at approximately ∼35°C. The room temperature dielectric permittivity (ε33T∕ε0) and loss were found to be 1380 and 2%, respectively, with piezoelectric properties of k33∼62% and d33∼265pC∕N and k31∼30% and d31∼−116pC∕N. The temperature dependence of the properties mimicked the compositional variation seen in the proximity of a morphotropic phase boundary [e.g., lead zirconate titanate (PZT)], with a maxima in the dielectric and piezoelectric properties and a corresponding “softening” of the elastic properties. Unlike that found for PZT-type materials, the modified KNN material exhibited characteristics of both “soft” and “hard” piezoelectricities owing to the distinctly different domain states associated with orthorhombic and tetragonal phases.
Lead-free potassium sodium niobate piezoelectric ceramics substituted with lithium and antimony (Na0.5K0.5)1−x(LiSb)xNb1−xO3 have been synthesized by conventional solid state sintering method. Compositionally engineered around the orthorhombic-tetragonal polymorphic phase transition, the dielectric and piezoelectric properties were further enhanced with the addition of lithium and antimony substituted into the perovskite structure. The combined effects of lithium and antimony additions resulted in a downward shift in the orthorhombic-tetragonal (TO-T) without significantly reducing TC. The dielectric, piezoelectric, and electromechanical properties were found to be ε∕ε0>1300, d33>260pC∕N, and kp>50%, while maintaining low dielectric loss. The enhanced polarizability associated with the polymorphic TO-T transition and high TC transition (∼390°C) should provide a wide range of temperature operation.
The electrical properties of CaCu3Ti4O12 ceramic materials, showing an enormously large dielectric constant, were investigated. It was found that the grain boundary plays an important role in the giant dielectric behaviour of these ceramics. Measurement of the electrical current density (J) versus the electrical field (E) was carried out. A good linear relationship between lnJ and E1/2 was found, which demonstrates that the Schottky barrier should exist at the grain boundary. A double Schottky barrier model composed of a depletion layer and a negative charge sheet was proposed, analogous to the barrier model for ZnO varistors. An activation energy value of about 0.6 eV was obtained from the data of the characteristic frequency corresponding to the peak of the imaginary part of the dielectric permittivity versus temperature, which may be attributed to the activation of
to
in the depletion layer.
Lead‐free (Ba1−xCax)(Ti0.95Zr0.05)O3 (x=0.02–0.20) ceramics were prepared successfully using a solid‐state reaction technique. The polymorphic phase transitions from orthorhombic to tetragonal phase around room temperature were identified in the composition range of 0.06
Lead-free (Ba 1Àx Ca x )(Ti 0.96 Sn 0.04 )O 3 (BCST) (x = 0-0.04) ceramics were prepared using solid-state reaction technique. At room temperature, a polymorphic phase transition from orthorhombic phase to tetragonal phase was identified in the composition range of 0.01x 0.03. Extremely high piezoelectric coefficient of d 33 = 510 pC/N and high planar electromechanical coupling factor of k p = 48% were obtained for the BCST ceramics at x = 0.02. These results indicate that the BCSTs are promising candidates for the widely used lead-based piezoelectric materials.
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