High piezoelectric d33 coefficient in (Ba1−xCax)(Ti0.98Zr0.02)O3 lead-free ceramics with relative high Curie temperature

Li, Wei; Xu, Zhijun; Chu, Ruiqing; Fu, Peng; Zang, Guo-Zhong

doi:10.1016/j.matlet.2010.07.042

Cited by 130 publications

(51 citation statements)

References 15 publications

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“…As can be seen, all the specimens exhibited homogeneous perovskite structures and no other second phase could be detected within the sensitivity of XRD. All the BCZT-xCu ceramics showed a coexistence of tetragonal and orthorhombic phases as Ba 0.98 Ca 0.02 Zr 0.02 Ti 0.98 O 3 [14,22]. However, the lattice parameter was affected by the introduction of Cu addition [17].…”

Section: Resultsmentioning

confidence: 98%

“…2(d), the optimized BCZT-0.8Cu ceramics have dense, homogeneous microstructure and enlarged grain size, which is benefited from the liquid sintering due to the introduction of Cu sintering aids. On the other hand, the occurrence of orthorhombic-tetragonal phase transition near room temperature and the relatively low E c (0.37 kV/mm) are also beneficial to the high piezoelectric performance [10,14,32]. As for dielectric properties, the dielectric coefficient ε r and dielectric loss tanδ are 3027 and 1.4% for the pure BCZT ceramic, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…As for BaTiO 3 (BT) based system, great progress such as a high piezoelectric coefficient of d 33 4300pC/N has been obtained in recent years [10][11][12][13][14]. However, BaTiO 3 (BT) based system has two severe shortcoming which restrict its practical applications [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of CuO additive on structure and electrical properties of low-temperature sintered Ba0.98Ca0.02Zr0.02Ti0.98O3 lead-free ceramics

Sun

Zhang

Liu

et al. 2015

Ceramics International

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effects of CuO additive on structure and electrical properties of low-temperature sintered Ba0.98Ca0.02Zr0.02Ti0.98O3 lead-free ceramics

Sun

Zhang

Liu

et al. 2015

Ceramics International

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“…9 The Ba 0.99 Ca 0.01 Ti 0.98 Zr 0.02 O 3 (BCZT) composition exhibited not only high piezoelectric responses but also high Curie temperature (T C $ 115 C). 10 It was proposed that the superior piezoelectric effect stemmed from the Morphotropic Phase Boundary (MPB) of a cubic-tetragonalrhombohedral triplepoint, giving rise to a very low energy barrier to facilitate the polarization rotation and lattice distortion. 9,11 The processing and properties of BCZT single crystals and ceramics have been innovatively developed.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and electric properties of BCZT thin films with seed layers

et al. 2017

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Lead free Ba 0.99 Ca 0.01 Ti 0.98 Zr 0.02 O 3 (BCZT) thin films with seed layers were prepared by using sol-gel processing technique. The seed layers, ranging from 10 nm to 40 nm, were introduced between the BCZT films and the Pt(111)/Ti/SiO 2 /Si substrates. The effects of seed layer thickness on the structure and dielectric properties of the thin films were investigated. With the increase of seed layer thickness, the grain size of the BCZT thin films increases from about 100 nm to 300 nm, accordingly, the dielectric constants decrease at lower frequency. The highest dielectric tunability is 34.5% for the films with a 20 nm-thick seed layer. Improved effective piezoelectric coefficients (d 33 ) were observed in the BCZT thin films. The maximum d 33 value of BCZT thin films with a 30 nm-thick seed layer is approximately 70 pm V À1, which is comparable to that of polycrystalline PZT thin films. The seed layer thickness dependence of the electric properties is attributed to the dipole polarization. This demonstrated the possibility to control the microstructure and improve properties of BCZT thin films, which could be exploited for functional devices that demand high quality.

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“…etc. on BZT were studied to improve piezoelectric, dielectric and ferroelectric properties [13][14][15][16][17][18]. The effect of MgTiO 3 on dielectric and relaxor behavior of Ba (Zr 0.35 Ti 0.65 ) O 3 was studied by Chou et al [19].…”

Section: Introductionmentioning

confidence: 99%

Effect of MgO on piezoelectric, dielectric and ferroelectric properties of (Ba1−x Mgx) (Ti0.98 Zr0.02) O3 lead-free piezoceramics

Chandraiah

Sahoo

Panda

2015

J Mater Sci: Mater Electron

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Effect of MgO on ferroelectric, dielectric, piezoelectric properties of (Ba 1-x Mg x ) (Ti 0.98 Zr 0.02 ) O 3 , (x = 0.00, 0.01, 0.015, 0.02 and 0.03 mol) lead free piezoceramics was studied. The powders were prepared by conventional solid state reaction method, calcined at 1000°C for 4 h. XRD patterns of the calcined powders show phase pure perovskite structure. The calcined powders were deagglomerated, pressed into pellets and sintered at 1150°C for 3 h. Scanning electron microscopy studies of thermally etched sintered pellets show sub-micron sized grains for undoped BZT and 3-5 lm sized grains for 0.01 mol MgO doped BZT. Energy dispersive X-ray analysis of MgO doped BZT sample confirms the presence of dopants very close to their stoichiometric compositions. The piezoelectric charge constant (d 33 = 164 pC/N), dielectric constant (K = 2348) and remnant polarization (P r = 3.3 lC/cm 2 ) were maximum for BZT samples containing 0.01 mol of MgO.

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High piezoelectric d33 coefficient in (Ba1−xCax)(Ti0.98Zr0.02)O3 lead-free ceramics with relative high Curie temperature

Cited by 130 publications

References 15 publications

Effects of CuO additive on structure and electrical properties of low-temperature sintered Ba0.98Ca0.02Zr0.02Ti0.98O3 lead-free ceramics

Effects of CuO additive on structure and electrical properties of low-temperature sintered Ba0.98Ca0.02Zr0.02Ti0.98O3 lead-free ceramics

Microstructure and electric properties of BCZT thin films with seed layers

Effect of MgO on piezoelectric, dielectric and ferroelectric properties of (Ba1−x Mgx) (Ti0.98 Zr0.02) O3 lead-free piezoceramics

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