Novel low dimensional quantum phenomena are expected at (110) LaAlO 3 /SrTiO 3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012) and A. Annadi et al., Nat. Commun. 4, 1838]. Here, two dimensional superconductivity of (110) LAO/STO samples with a superconducting transition temperature of 184 mK is demonstrated based on systematical transport measurements. The two dimensional characteristic of the superconductivity is confirmed by analyzing the Berezinskii-Kosterlitz-Thouless transition. The estimated superconductive thickness is about 18 nm. These features of superconductivity of (110) LAO/STO interfaces are comparable to those of (001) LAO/STO interfaces. This discovery may inspire a new round of upsurge on study of LAO/STO interfaces.
In this work, we investigate the electrical transport property and electronic structure of oxide heterostructure LaCrO 3 /SrTiO 3 (111). The interface grown under relatively low oxygen partial pressure is found to be metallic with a conducting critical thickness of 11 unit cells of LaCrO 3 . This criticality is also observed by x-ray photoelectron spectroscopy, in which the Ti 3+ signal intensity at the spectrum edge of the Ti-2p 3/2 core level increases rapidly when the critical thickness is reached. The variations of the valence band offset and full width at half maximum of the core-level spectrum with LaCrO 3 thickness suggest that the built-in fields exist both in LaCrO 3 and in SrTiO 3 . Two possible origins are proposed: the charge transfer from LaCrO 3 and the formation of a quantum well in SrTiO 3 . Our results shed light on the understanding of the doping mechanism at the polar/non-polar oxide interface. Moreover, due to the interesting lattice and spin structure of LCO in the (111) direction, our work provides a basis for further exploring the novel topological quantum phenomena in this system.
Carrier density (n s ) is a crucial parameter that governs the properties of correlated oxides, so the field-effect approach is an ideal tool to investigate the novel physics of the system. Here, the carrier-mediated transport of slightly doped anatase TiO 2 epitaxial films were studied by electric double layer transistor (EDLT) gating. The n s has been increased hugely, and concomitantly, the channels of anatase TiO 2 films undergo an insulator-metal transition with a decrease in resistivity by almost three orders of magnitude. More fascinating, the Kondo effect depends very strongly on n s , and the Hall mobility could be enhanced about one order of magnitude with increasing n s . This study shows that EDLT gating is a powerful method to stimulate and mediate novel phenomena of correlated oxides.
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