Chalcogenide glasses have been investigated in their thermodynamic, structural, and optical properties for application in various opto-electronic devices. In this study, the Sb 2 0 Se 8 0-x Ge x with x = 10, 15, 20, and 25 were selected to investigate the glass stability according to germanium ratios. The thermal, structural, and optical properties of these glasses were measured by differential scanning calorimetry (DSC), X-ray diffraction (XRD), and UV-Vis-IR Spectrophotometry, respectively. The DSC results revealed that Ge 2 0 Sb 2 0 Se 6 0 composition showing the best glass stability theoretically results due to a lower glass transition activation energy of 230 kJ/mol and higher crystallization activation energy of 260 kJ/mol. The structural and optical analyses of annealed thin films were carried out. The XRD analysis reveals obvious results associated with glass stabilities. The values of slope U, derived from optical analysis, offered information on the atomic and electronic configuration in Urbach tails, associated with the glass stability.
TeO x thin films were deposited at various O 2 /Ar gas-flow ratios by a reactive RFmagneton sputtering technique from TeO 2 and Te targets. X-ray diffraction (XRD) results revealed that the TeO x thin films were amorphous. The structure and chemical composition of the TeO x thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the TeO x thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the O 2 /Ar gas-flow ratios, the atomic composition ratio of TeO x thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing O 2 /Ar gas-flow ratio, the refractive index of the TeO x thin films decreased and the optical bandgap of the films increased.
Thermal and structural stability in the glass transition region of chalcogenide glasses has been investigated in terms of thermodynamics for application to various optoelectronic devices. In this study, the compositions of Ge x Sb 20 Se 80-x (x = 10, 15, 20, 25, and 30) were selected to investigate the glass stability according to germanium ratios. The chalcogenide bulks were fabricated by using a traditional melt-quenching method. Thin films were deposited by a thermal evaporation system, maintaining the deposition ratio of 3~5 Å in order to have uniformity. The thermal and structural properties were measured by a differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The DSC analysis provided thermal parameters and theoretical glass region stabilities. The XRD analysis supported the theoretical stabilities because of where the crystallization peak data occurred.
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