Hexagonal YMnO 3 and HoMnO 3 as well as (YMnO 3 /HoMnO 3 ) 15 superlattices were grown on (111) ZrO 2 (Y 2 O 3 ) and (111) Pt/TiO 2 /SiO 2 /p-type (100)Si substrates. Epitaxial stabilization was used on the same substrates to grow DyMnO 3 or TbMnO 3 (which normally crystallize in an orthorhombic, perovskite-type, structure). All heterostructures were obtained oriented, with the c-axis of the hexagonal cell perpendicular to the substrate plane. This orientation is desired since it is the direction of the ferroelectric polarization in hexagonal manganites. The strain state of the films grown on conductive Pt electrodes, tracked by the evolution of the c parameter as a function of film thickness, was found to be completely different than the one obtained on YSZ. Such a study is important for future strain engineering in multilayers. Highresolution transmission electron microscopy on superlattices grown on (111)Pt indicates a high crystalline quality along the c-axis and sharp interfaces.
We report the process technology for the modular integration of YBa2Cu3O7−δ (YBCO) and p-type metal-oxide-semiconductor (p-MOS) devices on the same silicon substrate. Basic test structures consisting of single p-MOS field-effect transistors with a Pt-based metallization and YBCO bridges were fabricated. After completion of the p-MOS fabrication, highly c-axis-oriented YBCO films showing a critical temperature of 86 K were grown on a free silicon surface. The electrical characteristics at 77 K of the p-MOS transistors were comparable to those of this technology with Al metallization. This means that no fatal degradation was introduced into the p-MOS process by the YBCO one. The cofabrication on the same silicon substrate of devices using such disparate technologies as YBCO and MOS is a very promising starting point for a new generation of monolithic integrated circuits combining the advantages of oxide and semiconductor properties.
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