Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
A scalable laser scribing approach to produce ZnO decorated laser-induced graphene in a unique laser-processing step was developed. The produced composites reveal promising optical and electrochemical properties to be applied in sensing devices.
Undoped and manganese doped zinc sulfide nanoparticles were produced by a fast, one-step and two-component microwave-assisted synthesis method. The solid phase retains around 78% of the initial Mn concentration, as revealed by Particle Induced X-ray Emission analysis. X-ray diffraction patterns confirmed zinc blende structure and in the transmission electron microscopy images, nanoparticles with triangular prism and cube shapes were observed, respectively with an average particle size around 7 nm and 13 nm. Dried powders of zinc sulfide nanoparticles, doped with 0.1 mol% and 0.7 mol% of Mn ions, show highest brilliance of luminescence under UV light. Increasing dopant levels resulted in a diminishing emission that vanishes above 4% of dopant concentration. The synthesis of ZnS was monitored and two main events were detected, one at 145 °C corresponding to the sol-gel phase formation and another after ~3 min at 300 °C where the precipitation of the zinc sulfide nanoparticles occurs.
The SLIM-cut technique provides a way to obtain thin silicon foils without a standard sawing step, thus avoiding kerf losses. This process consists of three steps: depositing a stressinducing layer on top of the silicon surface; stress activation by heating and cooling, resulting in crack propagation in the silicon and detachment of a thin silicon layer; and a chemical cleaning to remove the stress-inducing layer. This paper describes a new stress activation method using Ag/Al and epoxy stress-inducing layers. The crack propagation is controlled along the sample length in order to avoid unwanted additional crack formation and interaction with other crack fronts. Silicon foils with thickness ranging between 50 and 130 μm were obtained with effective lifetimes between 1 and 81 μs.
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