A mixed finite element method using rectangular elements is presented to solve the drift-diffusion model of semiconductors. The method, which is, on the one hand, a classical primal mixed finite element method, generalizes the one-dimensional Scharfetter-Gummel scheme to three dimensions in a natural way. The major contribution to a successful implementation of the method is the development of a fast and exact numerical evaluation of exponential fitted integrals, to which considerable attention has been devoted. The essentials of the efficient computation of these integrals are described, with full details to be presented elsewhere. In order to use computer resources parsimoniously, with the help of Lagrange multipliers, admissible bases on irregular rectangular meshes are constructed which allow a local element refinement. To validate the method, the modeling of a three-dimensional magneto transistor is presented.
Organic light‐emitting devices (OLEDs) consist of a stack of multiple thin film layers whose thicknesses influence both the optical and electronic performance. Upon injection and transport, the charge carriers may recombine to form excitons that diffuse and decay radiatively, thus leading to distinct recombination and emission zone profiles that determine device performance. Suitable simulation tools that allow a better understanding and efficient optimization of organic optoelectronics devices and materials are desirable.
The current state of-and future plans for-the microelectro mechanical CAD system SESES developed at the ETH Zurich are presented. The algorithmic requirements for the numerical modelling of microelectromechanical (MEM) devices are presented with reference to six important modelling problems. Numerical results are given for an electrostatic comb actuator.
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