Laser
nanofabrication has attracted great interest for mass production of
microstructures with desired or improved properties. We report here
a facile, maskless method for fabricating two-dimensional (2D) quasiperiodic
patterns on AlGaInP light-emitting diodes (LEDs) by photochemical
laser interference etching. The interference pattern produced by two
532 nm laser beams is transferred to the top GaP window layer of the
AlGaInP LEDs by photochemical etching of GaP in an etchant composed
hydrofluoric acid (HF) and hydrogen peroxide (H2O2). The etched GaP surface contains 2D quasiperiodic pyramidal structures
with a period of 150 ± 10 nm, which can dramatically increase
the light extraction efficiency of the AlGaInP LEDs by 70%. This maskless
patterning method is general and can be applied to fabricating patterns
on optoelectronic devices based on other semiconductor materials.
ARTICLE
This journal isWe report a novel method for fabricating periodic indentation patterns on AlGaInP light emitting diodes (LEDs) that can effectively improve the light extraction efficiency. The patterns consist of hemispherical pits created by direct imprinting the top GaP window layer of AlGaInP LEDs with patterned sapphire (PS). The angle resolved electroluminescent tests reveal that the patterned chips show an average light emission enhancement of 155% over the original planar chips.
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