A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/ f noise and 1/ f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/ f noise mechanism in the β-Ga2O3 FinFET in this work.
In this work, a normally-on single monocrystal β-Ga2O3 nanowire (NW) back-gate field-effect transistor (FET) has been demonstrated by transferring MOCVD-grown β-Ga2O3 NWs on sapphire onto SiO2(300nm)/p+-Si substrate. When the gate voltage (VG) exceeds -14 V, the device is pinched off, with an on/off ratio greater than 10^8 and a drain leakage current density as low as ~7.34 fA. The maximum field-effect carrier mobility for these n-doped single β-Ga2O3 NW FETs reaches ~62.2 cm2/V·s. A prompt degradation in the on/off ratio for these β-Ga2O3 NW back-gate FETs is observed as the operation temperature increased up to 400 K. With strong evidence, the temperature-dependent degradation in the performance is determined by the activation of self-trapped holes and intrinsic vacancies related defects, both of which would lead to a rapid increase in the channel leakage current at high temperatures.
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