A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/ f noise and 1/ f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/ f noise mechanism in the β-Ga2O3 FinFET in this work.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.