Highly (110)-oriented and (100) nearly epitaxial 0.7PMN-0.3PT thin films were deposited on (1012) sapphire and (100) LaAlO3 substrates, respectively, using a dip-coating method. Optical waveguide characterization and electro-optic effect measurements of the film on sapphire substrate were demonstrated. Low propagation loss of 4.1 dB/cm and high quadratic electro-optic coefficient of 0.75×10−16 (m/V)2 were obtained at wavelength of 632.8 nm. Epitaxial PMN-PT thin films will be suitable for integrated optic devices.
In this work we investigated the material properties and electrical performance of polycrystalline silicon (poly-Si) films formed in the single and double (overlap) scanned area of excimer laser in the long axis direction at various energy densities. Poly-Si thin film transistors (TFTs) were fabricated by using the material formed by the excimer laser annealing (ELA) process. We found that the device performance of poly-Si films formed at the energy density of 200 mJ/cm2 is approximately equal to the single and double scanned area, whose overlapping irradiation does not change the characteristics of TFTs. Based on this result, a large poly-Si panel using the ELA method can be fabricated by overlapping the laser scans in the long axis direction.
The structural and quadratic electro-optic properties in lead magnesium niobate titanate thin films have been systematically studied as a function of the fraction x of lead titanate. (110)-oriented, pyrochlore-free PMN–PT films with PT contents around morphotropic phase boundary compositions, which have a propagation loss as low as 3 dB/cm and a high electro-optical (EO) coefficient of 1.32×10−16 (m/V)2, have been fabricated on (1012)-cut sapphire substrates. The EO measurements show that the PMN–PT is a highly promising electro-optic material.
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