Articles you may be interested inNickel vacancy behavior in the electrical conductance of nonstoichiometric nickel oxide film Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications NiO x thin film exhibited excellent bistable unipolar resistive switching ͑RS͒, which has a high potential in nanoscale nonvolatile-memory applications. The underlying reaction of RS in NiO x is still in debate. We studied the chemical bonding states of Ni 2p and O 1s at high/low resistance spots using focused x-ray photoelectron spectroscopy. The disproportionation and comproportionation reactions of 3NiO↔ Ni+ Ni 2 O 3 accounted for the RS of NiO x . The calculated Gibbs energy of the reaction interpreted its reversibility in thermodynamics. The expansion and contraction of the filaments with switching were observed by conducting atomic force microscopy.
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