No abstract

The reaction of gallium trichloride and methanol under atmospheric pressure chemical vapor deposition conditions leads to the production of gallium oxide thin films on a variety of substrates. Scanning electron microscopy (SEM) indicated that an island growth mechanism predominated. X-ray photoelectron spectroscopy (XPS) revealed binding energy shifts of 530.6 eV for O 1s and 20.3 eV for Ga 3d. The films were X-ray amorphous. Energydispersive X-ray analysis (EDXA) and electron probe microanalysis (EPMA) gave coherent elemental compositions, indicating that a single phase Ga 2 O 3 was made, with negligible impurity levels. The films showed little optical reflectance (∼10%) and 65-75% total transmission from 400 to 800 nm. Gas-sensing experiments indicated that the films responded best to a reducing gas at 450 °C.

No abstract

No abstract

No abstract