Studies of electron energy loss spectroscopy and selected area electron diffraction ͑SAED͒ were systematically performed on 15 and 25 at. % lanthanide ͑Ln͒-doped ceria samples ͑Ln= Sm, Gd, Dy, and Yb͒, through which the local ordering of oxygen vacancies that develops with increase in doping level was confirmed in the sequence of ͑Gd, Sm͒ Ͼ DyϾ Yb. Furthermore, a monotone correlation between the development of the ordering and the degradation of ionic conductivity with increasing the doping concentration from 15 to 25 at. % was observed. Based on the analysis of SAED patterns, a structural model for the ordering of oxygen vacancies has been constructed, in which the arrangement of oxygen vacancies is similar to that in C-type Ln 2 O 3 oxides and the 1 2 ͗110͘ pairs of the vacancies are preferred. Then, the factors that can influence the formation of the ordering are discussed.

What's in a wire? To determine the fundamental reason for obtaining tapered nanowires, GaAs nanowires were grown on {111}B GaAs substrates. Their novel structural characteristics (e.g., a truncated triangular cross section at the base of the nanowires; see image) were carefully investigated using high‐resolution SEM and various TEM techniques. Based on the obtained structural characteristics of these nanowires and the growth environment, an asymmetrical lateral‐growth mechanism has been identified.

25 at. % Rare-earth (RE)-doped ceria samples (RE=Sm, Dy, Y, and Yb) were examined using transmission electron microscopy and electron energy loss spectroscopy, from which the oxygen vacancy ordering in nanosized domains was confirmed. The relationships of the dopant type, oxygen vacancy ordering, and ionic conductivity of doped ceria were established. It is found that the ordering of oxygen vacancies depends strongly on the dopant type, and the development of nanosized domains with a higher degree of ordering can lead to a more dramatic decrease of ionic conductivity in doped ceria.

Gold on the move…︁ A novel growth phenomenon of axial InAs/GaAs nanowire heterostructures catalyzed by Au particles was observed. Transmission electron microscopy has determined a sequence of events: 1) Displacement of the Au particle at the end of the nanowire due to InAs clustering, 2) further InAs growth leading to sideways movement of the Au particle, and 3) eventual downward nanowire growth due to the preservation of a Au/GaAs interface (see scheme).

We report a novel phase separation phenomenon observed in the growth of ternary In(x)Ga(1-x)As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core-shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In(x)Ga(1-x)As nanowires high precursor flow rates generate ternary In(x)Ga(1-x)As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In(x)Ga(1-x)As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.