This work develops
a rationale for effective sensitization of trivalent
lanthanide cation (Ln3+) luminescence in a semiconductor
nanoparticle by examining the luminescence characteristics of Ln3+ dopants in titanium dioxide nanoparticles [Ti(Ln)O2] [Ln = praseodymium (Pr), neodymium (Nd), samarium (Sm), europium
(Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho),
erbium (Er), thulium (Tm), or ytterbium (Yb)], as a representative
model system. For excitation of the TiO2 host at 350 nm
the intraconfigurational 4f–4f sharp luminescence bands are
observed for the Nd, Sm, Eu, Ho, Er, Tm, and Yb incorporated (doped)
nanoparticles, and no such luminescence is observed for the Pr, Gd,
Tb, and Dy containing nanoparticles. While host sensitized luminescence
of lanthanide ions dominate the emission in the Nd and Sm incorporated
nanoparticles, the host sensitization effect is less pronounced for
the Eu and Yb containing systems, and for the Ho, Er, and Tm doped
nanocrystals only a subset of the dopant ions’ luminescence
bands is sensitized. The experimental observations of the host sensitized
Ln3+ luminescence properties in the [Ti(Ln)O2] nanoparticles can be rationalized by considering that the dopant
ions act as charge traps in the host lattice and associated environment
induced luminescence quenching effects. Using these results, an energy
offset between the trap site and the nanoparticle’s band edge
that will generate an optimal host sensitized dopant emission is proposed.
The approach presented necessarily improves over a combinatorial approach
to select the host and dopant moieties, with the benefit of providing
physicochemical insight regarding the nature of photophysical processes
in a given host (semiconductor nanoparticle)–guest (Ln3+) composite system.