Previous studies indicate that the dark conductivity in amorphous and microcrystalline silicon may increase or decrease with exposure to deionized water (DIW) or pure oxygen at 80 °C but always decreases with light exposure. While the light-induced effect is linked to paramagnetic dangling bonds (Do), the origin of metastability in microcrystalline silicon remains unclear. In this study, we use steady-state photoconductivity (SSPC), dual-beam photoconductivity (DBP), and electron spin resonance (ESR), to study the behaviors under soaking in DIW and (or) pure oxygen at 80 °C and light-exposure of amorphous (a-Si:H) and nanostructured (nc-Si:H) silicon samples deposited in a capacitively coupled plasma-enhanced chemical vapor deposition system. Powders from thick samples of low and high crystallinity (Xc) peeling off large substrates were collected in quartz tubes for ESR measurements. Dark conductivity decreases upon exposure to pure oxygen at 80 °C for nc-Si:H but remains unchanged for a-Si:H. The ESR signal attributed to Do decreases with soaking in DIW for high and low crystallinity nc-Si:H but the effect is more significant for higher Xc. Changes in SSPC, DBP, and ESR are used to compare the degradation mechanisms because of O2 exposure and light for amorphous and nanostructured silicon.
Methylammonium lead iodide (MAPbI$$_3$$
3
) (CH$$_3$$
3
NH$$_3$$
3
PbI$$_3$$
3
) is popular material for edge technology application, but it still includes many uncertainties. Particularly, molecular and electronic degradation (electronic defect distribution) and mobility–lifetime product still hold many mysteries. Stemming from the atmospheric or light-induced degradation, mobility–lifetime product changes are still unknown and haven’t been studied up to now. In this study, mobility–lifetime product change was investigated depending on degradation source such as atmospheric and light soaked. MAPbI$$_3$$
3
films were deposited by thermal chemical vapor deposition (thermal CVD). Structural analysis was done by X-ray diffraction (XRD), respectively. Deposited MAPbI$$_3$$
3
films were exposed to laboratory ambient, vacuum atmosphere, deionized water vapor (DIWV) atmosphere and UV light soaking at constant temperature (300K) to define changes on mobility–lifetime product.
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