No abstract

The intermediate transport regime in nanoscale transistors between the fully ballistic case and the quasiequilibrium case described by the drift-diffusion model is still an open modeling issue. Analytical approaches to the problem have been proposed, based on the introduction of a backscattering coefficient, or numerical approaches consisting in the Monte Carlo solution of the Boltzmann transport equation or in the introduction of dissipation in quantum transport descriptions.In this paper we propose a very simple analytical model to seamlessly cover the whole range of transport regimes in generic quasi-one dimensional field-effect transistors, and apply it to silicon nanowire transistors. The model is based on describing a generic transistor as a chain of ballistic nanowire transistors in series, or as the series of a ballistic transistor and a drift-diffusion transistor operating in the triode region. As an additional result, we find a relation between the mobility and the mean free path, that has deep consequences on the understanding of transport in nanoscale devices.

In this paper, we present a novel compact model for channel noise in FETs where the effects of far-fromequilibrium transport are considered in a fundamental way. The intermediate range between the drift-diffusion and the ballistic transport regimes is covered through an analytical treatment based on Büttiker virtual probes approach to inelastic scattering. The channel noise is interpreted as due to the contribution of thermal noise at the source end and of shot noise associated with local ballistic transport at the drain end. The model can be improved through the inclusion of Fermi and Coulomb correlations, that provide a significant suppression of shot noise.

No abstract

No abstract