Physics-Based Compact Model of Nanoscale MOSFETs—Part II: Effects of Degeneracy on Transport

Mugnaini, Giorgio; Iannaccone, Giuseppe

doi:10.1109/ted.2005.851831

Cited by 45 publications

(12 citation statements)

References 18 publications

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“…Within this scenario, carriers are removed from the device and injected into a virtual reservoir where they are thermalized and reinjected into ballistic channel of length ᐉ o . In fact, Mugnaini and Iannaccone, 44,45 validate this model by applying it to a nanoscale MOSFET. The future investigators engaged in the research and development of nanostructures will greatly benefit by design of new experiments, new models, and engaging new simulations with realistic parameters leading to performance evaluation for possible circuit and system applications.…”

Section: Discussionmentioning

confidence: 86%

Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field

Arora¹,

Chek²,

Tan³

et al. 2010

Journal of Applied Physics

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The equilibrium Fermi–Dirac distribution is revealed to transform to an asymmetric distribution in a very high electric field where the energy gained (or lost) in a mean free path is of paramount importance. The equilibrium stochastic velocity vectors randomly oriented in and opposite to the quasifree direction of a nanowire are shown to streamline in the presence of an extremely high electric field. The complete velocity-field characteristics are acquired. The ultimate directed drift velocity in a towering field is shown to be limited to the appropriately averaged Fermi velocity in the strongly degenerate limit where only half of the quantum states are accessible to electrons. This unidirectional velocity does not sensitively depend on the low-field Ohmic mobility. The emission of a quantum in the form of a phonon or photon lowers the saturation velocity from its ultimate unidirectional limit.

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Section: Discussionmentioning

confidence: 86%

Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field

Arora¹,

Chek²,

Tan³

et al. 2010

Journal of Applied Physics

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“…2-D momentum relaxation times of acoustic and intervalley phonons [27], surface roughness [28], and remote Coulomb scatterings (RCSs) [29] are then integrated into Fischetti total mobility (µ TOT ) modeling [30]. Carrier mean free path is finally achieved considering µ eff and λ relation accounting for degeneracy [31] …”

Section: B λ Extraction With Kubo-greenwood Simulationsmentioning

confidence: 99%

Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices

Barral

Poiroux

Barraud

et al. 2009

IEEE Trans. Nanotechnology

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International audienceDue to a new quasi-ballistic extraction methodology dedicated to low-longitudinal-field conditions, experimental carrier mean-free-paths have been determined on strained and un-strained fully depleted silicon-on-insulator (n-FDSOI) devices with Si film thickness ranging from 11.8 to 2.5 run, gate length down to 30 nm, and a TiN/HfO2 gate stack. Electron mobility evolution with the Si film thickness, reported in a previous study, is explored and quantitatively explained. Moreover, through inversion charge and temperature deep investigations, dominant carrier transport mechanisms are analyzed. It is experimentally revealed that transport degradation occurs in short and thin channels, which is shown to be mainly due to additional Coulomb scatterings rather than ballistic artifact in both strained and unstrained devices

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“…Following [4,5], the vertical electrostatics on the peak of the electrostatic potential in a non-degenerate ballistic MOS-FET with generic architecture and subject to quantum confinement is:…”

Section: Noise In Ballistic Mosfetsmentioning

confidence: 99%

Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime

Mugnaini

Iannaccone

2006

J Comput Electron

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In this paper, we present a novel compact model for channel noise in FETs where the effects of far-fromequilibrium transport are considered in a fundamental way. The intermediate range between the drift-diffusion and the ballistic transport regimes is covered through an analytical treatment based on Büttiker virtual probes approach to inelastic scattering. The channel noise is interpreted as due to the contribution of thermal noise at the source end and of shot noise associated with local ballistic transport at the drain end. The model can be improved through the inclusion of Fermi and Coulomb correlations, that provide a significant suppression of shot noise.

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Physics-Based Compact Model of Nanoscale MOSFETs—Part II: Effects of Degeneracy on Transport

Cited by 45 publications

References 18 publications

Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field

Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field

Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices

Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime

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