We describe a low-temperature wafer-scale thermocompression bonding using electroplated gold layers. Silicon wafers were completely bonded at 320°C at a pressure of 2.5 MPa. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. Helium leak rate was measured for application of thermocompression bonding to hermetic packaging and was 2.74 ± 0.61 ϫ 10 −11 Pa m 3 /s. Therefore, Au thermocompression bonding can be applied to high quality hermetic wafer level packaging of radio-frequency microelectromechanical system devices.
Thermocompression bonding of electroplated gold is a promising technique for achieving
low temperature, wafer level hermetic bonding without the application of an electric field or high
temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The
interconnection between the packaged devices and external terminal did not need metal filling and
was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged
wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of
FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9.
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