Abstract:Thermocompression bonding of electroplated gold is a promising technique for achieving
low temperature, wafer level hermetic bonding without the application of an electric field or high
temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The
interconnection between the packaged devices and external terminal did not need metal filling and
was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged
wafers had the leak rate of 2.74 ± 0.61 × 10-11… Show more
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