Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in‐plane p–n junctions for sub‐nanometer thin low‐power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one‐pot chemical vapor deposition process yielding MoSe2‐WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two‐step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High‐resolution transmission electron microscopy further confirms the high‐quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self‐powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.
Silica-based optical fibres are a workhorse of nonlinear optics, providing ready access to a range of nonlinear phenomena including solitons and self-phase modulation. However, they have one fundamental limitation: due to the amorphous nature of silica, they do not exhibit second-order nonlinearity, except for negligible contributions from surfaces. Here we demonstrate second-harmonic generation in functionalized optical fibres by using a monolayer of highly nonlinear MoS2 directly grown on the fibre’s core. The MoS2-functionalized fibre exhibits a second-order susceptibility (χ(2)) value of 44 pm V–1 and a second-harmonic generation conversion efficiency of 0.2 × 10–3 m−2 W−1. This approach is scalable and can be generalized to other transition metal dichalcogenides and a wide range of waveguide systems. Our results demonstrate a new approach towards efficient in-fibre second-harmonic generation sources and may establish a platform for χ(2)-based nonlinear fibre optics, optoelectronics, photonics platforms, integrated optical architectures and active fibre networks.
The light-matter interaction length in monolayer transition metal dichalcogenides (TMD) [1,2] on planar substrates is restricted to sub-nanometers due to their miniscule thickness. Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interactions with light. Integrating them into optical fibers yields novel opportunities in optical communication, remote sensing, and all-fiber optoelectronics. However, the scalable and reproducible deposition of high-quality monolayers on optical fibers is a challenge. Here, the chemical vapor deposition of monolayer MoS 2 and WS 2 crystals on the core of microstructured exposed-core optical fibers and their interaction with the fibers' guided modes are reported. Two distinct application possibilities of 2D-functionalized waveguides to exemplify their potential are demonstrated. First, the excitonic 2D material photoluminescence is simultaneously excited and collected with the fiber modes, opening a novel route to remote sensing. Then it is shown that third-harmonic generation is modified by the highly localized nonlinear polarization of the monolayers, yielding a new avenue to tailor nonlinear optical processes in fibers. It is anticipated that the results may lead to significant advances in optical-fiber-based technologies.
We report for the first time the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals material grow conformally across the curves, edges, and the silicon–SiO2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO2) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.
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