Direct growth of monolayer MoS<sub>2</sub> on nanostructured silicon waveguides

Kuppadakkath, Athira; Najafidehaghani, Emad; Gan, Ziyang; Tuniz, Alessandro; Ngo, Gia Quyet; Knopf, Heiko; Löchner, Franz J. F.; Abtahi, Fatemeh; Bucher, Tobias; Shradha, Sai; Käsebier, Thomas; Palomba, Stefano; Felde, Nadja; Paul, Pallabi; Ullsperger, Tobias; Schröder, Sven; Szeghalmi, Adriana; Pertsch, Thomas; Staude, Isabelle; Zeitner, Uwe D.; George, Antony; Turchanin, Andrey; Eilenberger, Falk

doi:10.1515/nanoph-2022-0235

Cited by 10 publications

(12 citation statements)

References 78 publications

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“…15,30 A buffer layer between the TMD, and the substrate was found to be helpful to avoid substrate effects in prior works. 31 Therefore, the TiO 2 metasurface was coated with a thin layer (10 nm) of Al 2 O 3 using atomic layer deposition process. This resulted in a red-shift of the measured quasi-BIC resonance to 811 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Our exploration of the effects of annealing and Al 2 O 3 coating on resonance wavelength of the metasurface provides valuable insights, particularly for the direct growth of transition metal dichalcogenides, as demonstrated in related work on waveguides. 31 Future work could focus on scaling the metasurface to a larger area to enhance collective resonance effects. Additionally, adopting a design with resonances at both excitation and emission wavelengths, concentrating the field distribution towards the top of the metasurface, could further improve results.…”

Section: Discussionmentioning

confidence: 99%

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Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Kuppadakkath,

Barreda,

Yang

et al. 2024

Photonic and Phononic Properties of Engineered Nanostructures XIV

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Bound states in the continuum (BICs) are a category of localized states that exist within the continuum of radiating modes. The high Q-factor exhibited by these states makes quasi-BICs interesting for enhancing the emission from quantum emitters. Quasi-BICs have been experimentally realized in silicon for applications in the infrared wavelength range. Instead of silicon, hydrogenated amorphous silicon (a-Si:H) has been used for achieving quasi-BIC resonance in parts of visible spectra. Titanium dioxide (TiO 2 ) has emerged as an alternate material for fabricating dielectric metasurfaces with high Q-factor in the visible spectral range due to its lower absorptive losses and high refractive index. However, the fabrication process for TiO 2 nanostructures presents challenges compared to the well-established fabrication processes in silicon. Our work focuses on the design and fabrication of TiO 2 metasurfaces supporting a quasi-BIC mode around 795 nm, with a theoretical Q-factor of 353. Experimental results reveal a maximum Q-factor of 258 at 791 nm. We discuss encountered fabrication constraints and explore possibilities for improvement in both design and fabrication processes. This study contributes to the understanding of quasi-BIC resonance in TiO 2 metasurfaces, and opens avenues for further exploration in the utilization of TiO 2 for high-Q dielectric metasurfaces, offering i nsights i nto t he d esign and optimization of these structures.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Kuppadakkath,

Barreda,

Yang

et al. 2024

Photonic and Phononic Properties of Engineered Nanostructures XIV

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“…In addition to the substrate modification methods mentioned above, the growth of TMDs on curved substrates is also an essential method for integrating 2D TMDs directly with 3D substrates. [156,157] For instance, the growth of 2D TMDs on optical fibers is highly promising for the integrated optoelectronic and photonic systems. [157][158][159] However, the growth of large-scale and high-quality monolayer TMDs on optical fiber is still challenging.…”

Section: Curved Substratesmentioning

confidence: 99%

Substrate Engineering for Chemical Vapor Deposition Growth of Large‐Scale 2D Transition Metal Dichalcogenides

Ouyang

Zhang

et al. 2023

Advanced Materials

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The large‐scale production of two‐dimensional (2D) transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high‐quality and large‐scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, we provide an insightful review by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large‐scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high‐quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large‐area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high‐quality 2D TMDs toward their industrial‐scale practical applications.This article is protected by copyright. All rights reserved

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“…For example, recent research has exposed opportunities in optoelectronics where layered semiconductors with traditional semiconductors take advantage of the microstructures formed to improve light absorption [274,275]. Furthermore, reports on the direct growth of MoS 2 grown on micrometerscale Si waveguides [276], nanometer-scale FinFETs, and gate all around field effect transistors (GAAFETs) channels [277] make for exciting opportunities.…”

Section: Advantage Of Layered-tradition Semiconductor Heterogeneous I...mentioning

confidence: 99%

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

Chen

Deng

Zhang

et al. 2023

Int. J. Extrem. Manuf.

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As Moore's law deteriorates, the research and development of new materials system are necessary for moving towards the post Moore’s era. Traditional semiconductor materials, such as silicon, have been the cornerstone of modern technologies for more than half a century. This has been due to the abundant research and engineering on new techniques to continuously enrich silicon-based materials system and, subsequently, to develop better performed silicon based devices. Meanwhile, in emerging post Moore’s era, layered semiconductor materials, such as transition metal dichalcogenides, have piqued the interest of researchers due to their unique electronic and optoelectronic properties to power up the new era of next generation electronics. As a result, techniques to engineer the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices. However, there are still few serious limitations on layered semiconductor synthesis and engineering, impeding the utilization of layered semiconductor-based devices for mass applications. As a practical alternative, heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the unique properties of layered semiconductors with well-developed traditional semiconductors materials system. Here, we provide an overview of the comparative coherence between layered and traditional semiconductors, starting with transition metal dichalcogenides as the representation of layered semiconductors. We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors, which might be the optimum strategy for emerging semiconductor research community and chip industry in the next few decades.

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Direct growth of monolayer MoS₂ on nanostructured silicon waveguides

Cited by 10 publications

References 78 publications

Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Substrate Engineering for Chemical Vapor Deposition Growth of Large‐Scale 2D Transition Metal Dichalcogenides

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

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Direct growth of monolayer MoS2 on nanostructured silicon waveguides

Cited by 10 publications

References 78 publications

Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Quasi-BIC resonance in TiO2 metasurface for emission enhancement of two-dimensional material

Substrate Engineering for Chemical Vapor Deposition Growth of Large‐Scale 2D Transition Metal Dichalcogenides

Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

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Direct growth of monolayer MoS₂ on nanostructured silicon waveguides