Topological defects in matter behave collectively to form highly non-trivial structures called topological textures that are characterised by conserved quantities such as the winding number. Here we show that an epitaxial ferroelectric square nanoplate of bismuth ferrite subjected to a large strain gradient (as much as 105 m−1) associated with misfit strain relaxation enables five discrete levels for the ferroelectric topological invariant of the entire system because of its peculiar radial quadrant domain texture and its inherent domain wall chirality. The total winding number of the topological texture can be configured from − 1 to 3 by selective non-local electric switching of the quadrant domains. By using angle-resolved piezoresponse force microscopy in conjunction with local winding number analysis, we directly identify the existence of vortices and anti-vortices, observe pair creation and annihilation and manipulate the net number of vortices. Our findings offer a useful concept for multi-level topological defect memory.

A record-high, near-theoretical intrinsic magnetoelectric (ME) coupling of 7 V cm Oe is achieved in a heterostructure of piezoelectric Pb(Zr,Ti)O (PZT) film deposited on magnetostrictive Metglas (FeBSi). The anchor-like, nanostructured interface between PZT and Metglas, improved crystallinity of PZT by laser annealing, and optimum volume of crystalline PZT are found to be the key factors in realizing such a giant strain-mediated ME coupling.

This study demonstrates the modulation of off-resonance magnetoelectric (ME) response of the Pb(Zr,Ti)O 3 (PZT)/ Metglas (FeBSi) bilayered composite by laser annealing. A continuous-wave 532 nm Nd:YAG laser with varying fluences (210-390 J/mm 2 ) was utilized to anneal the 2 lm thick PZT film deposited using granule spray in vacuum (GSV) technique on magnetostrictive amorphous Metglas foil. It was found that the dielectric and ferroelectric properties of the PZT film are strongly affected by the exposure to laser fluence. The ME voltage coefficient of PZT/Metglas increased with the fluence up to 345 J/mm 2 , reaching a high value of 880 mV/cmÁOe. The electrical and ME properties were correlated with the changes observed in crystallinity and grain size of the PZT film as well as with the alterations in microstructure and magnetic behavior of Metglas. Our results demonstrate that enhanced ME coupling can be realized in PZT/Metglas film composites by controlling the laser fluence.

A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

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