Ferroelastically protected polarization switching pathways to control electrical conductivity in strain-graded ferroelectric nanoplates

Kim, Kwang Eun; Kim, Yong Jin; Zhang, Y.; Xue, Fei; Kim, Gi Yeop; Song, Kyung; Choi, Si Young; Liu, Jun‐Ming; Chen, Lei; Yang, Chul–Su

doi:10.1103/physrevmaterials.2.084412

Cited by 15 publications

(20 citation statements)

References 42 publications

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“…From the reconstructed polarization field, one can see that the nanoisland forms a type-II-like domain texture quite similar to that reported in BFO nanoislands grown on LaAlO 3 substrates. 25,26 The domain texture consists of center-divergent quad-domains with upward polarizations and cross-shaped buffer domains with downward polarizations. Possible driving forces of the forming of this exotic domain texture are (a) the shear strains, (b) the flexoelectric field, and (c) the depolarization/built-in fields, as suggested by previous works.…”

Section: Resultsmentioning

confidence: 99%

“…Interestingly, enhanced electronic conduction occurs near the side walls of the as-grown nanoislands in type-II texture (with the Pr 0.5 Ca 0.5 MnO 3 layer as a bottom electrode) and the enhanced electronic conduction is suppressed by 180°polarization switching in a reversible way. 26 Different from type-I texture, the formation of the type-II texture is considered to be caused by the strong shear-strain− T h i s c o n t e n t i s polarization coupling and the flexoelectric effect associated with strain gradients due to a relaxation of the misfit strain between LaAlO 3 substrates and BFO. Despite these interesting findings, so far center-type quadrant domain textures have only been observed in BFO nanoislands on LaAlO 3 substrates with a large lattice mismatch ∼−4.4%.…”

Section: Introductionmentioning

confidence: 99%

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Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃

Ding

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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Topological quad-domain textures with interesting cross-shaped buffer domains (walls) have been recently observed in BiFeO3 (BFO) nanoislands, indicating a new platform for exploring topological defects and multilevel memories. Such domain textures have nevertheless only been limited in BFO nanoislands grown on LaAlO3 substrates with a large lattice mismatch of ∼−4.4%. Here, we report that such exotic domain textures could also form in BFO nanoislands directly grown on a conductive substrate with a much smaller lattice mismatch and the local transport characteristics of the BFO nanoislands are distinct from the previously reported ones. The angle-resolved piezoresponse force images verify that the domain textures consist of center-divergent quad-domains with upward polarizations and cross-shaped buffer domains with downward polarizations. Interestingly, textures with multiple crosses are also observed in nanoislands of larger sizes, besides the previously reported ones with a single cross. The nanoislands exhibit strong diodelike rectifying characteristics and the quad-domains show a higher average conductance than the cross-shaped buffer domains, indicating that there is a certain correlation between the local conductance of the nanoislands and the domain textures. This transport behavior is attributed to the effect of the depolarization field on the Schottky barriers at both the substrate/BFO interface and the tip/BFO junction. Our findings extend the current understanding of the exotic quad-domain textures of ferroelectric nanoislands and shed light on their potential applications for configurable electronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃

Ding

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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“…Topological charge can be also configured by domain flipping in strain graded nanoplatelets, 8 thereby creating charged domain walls. 9,10 Recently, research on topological textures in quasiinfinite-sized thin films and bulk crystals has also been pursued, following the discovery of bubble structures and polar vortex arrays in superlattices 11,12 and self-organized vortices in hexagonal manganites. 13,14 The two-dimensional (2D) winding number is invariant under continuous deformation and the total topological charge is protected by the given boundary condition.…”

Section: Introductionmentioning

confidence: 99%

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

et al. 2019

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Topological defects have received much attention due to their stability against perturbations and potential applications in nonvolatile high-density memory. Topologically non-trivial textures can be compelled by constraints on boundary condition, geometrical structure, and curved space. Ferroelectric vortices have been realized in various finite-sized nanostructures that allow such constraints to be produced. However, manipulation of topological excitations in otherwise topologically trivial flat ferroelectrics remains a tantalizing challenge. Here we show that a vortex-antivortex pair can be produced by a momentary electric pulse using a tip in a usual Kittel's stripe domain of a BiFeO 3 thin film. Moreover, we demonstrate that the distance between the paired vortex and antivortex can be controlled by dragging the biased tip. The spatial distribution of the local piezoresponse vectors is directly mapped using angle-resolved piezoresponse force microscopy and analyzed by local winding number calculation. Our findings offer a useful concept for the control of topological defects in ferroelectrics.

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“…More recently, exotic crossed quadrant center convergent and divergent domain structures [77,78,79] that allow for head-to-head and tail-to-tail domain wall configurations, respectively, were reported in nanostructures of BFO. These radially convergent and divergent states were electrically addressable, and conductivity at walls was shown to be tunable by three orders of magnitude.…”

Section: Conduction At Domain Wallsmentioning

confidence: 99%

Functional Ferroic Domain Walls for Nanoelectronics

2019

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A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.

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Ferroelastically protected polarization switching pathways to control electrical conductivity in strain-graded ferroelectric nanoplates

Cited by 15 publications

References 42 publications

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Functional Ferroic Domain Walls for Nanoelectronics

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Ferroelastically protected polarization switching pathways to control electrical conductivity in strain-graded ferroelectric nanoplates

Cited by 15 publications

References 42 publications

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO3 Nanoislands on Nb-Doped SrTiO3

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO3 Nanoislands on Nb-Doped SrTiO3

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Functional Ferroic Domain Walls for Nanoelectronics

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Product

Resources

About

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃

Exotic Quad-Domain Textures and Transport Characteristics of Self-Assembled BiFeO₃ Nanoislands on Nb-Doped SrTiO₃