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In this paper, we present a set of models that describe the principal components of the Horizontal Ribbon Growth processmainly, the interaction between fluid flow and heat transfer, the crystallization dynamics, and the effect of impurities on the morphology of the interface. Fluid-flow and heat-transfer models show the relationship between the pulling rate and the thickness of the silicon film. A crystallization model is developed to find the concentration distribution of impuritiesaluminum in this casein the melt and in the ribbon. We find that, because of low growth velocities, there is no formation of a soluteenriched boundary layer and that a 50-fold reduction of aluminum impurities can be expected. Finally, we use the Mullins− Sekerka stability theory to show that aluminum impurities at the proposed levels do not destabilize the interface upon applied perturbations.

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