Modeling and laboratory scale proof of concept of the horizontal ribbon growth process: Application to silicon wafer manufacturing

Oliveros, German A.; Wang, Ray; Sridhar, Seetharaman; Ydstie, B. Erik

doi:10.1109/pvsc.2012.6318155

Cited by 2 publications

(5 citation statements)

References 2 publications

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“…Conversely, the solidification position was found to shift rightward in response to an increase in pulling velocity, and leftward in response to a decrease in pulling velocity. These findings are consistent with those presented by Oliveros [12], which confirmed that slowly pulling the seed results in the formation of an excessive amount of ice near the lip of the bath, whereas extracting the seed …”

Section: Heat Exchange Amount and Pulling Velocitysupporting

confidence: 93%

“…To express the function (9), we need to use the mathematical description that used by Oliveros [12].…”

Section: Discussionmentioning

confidence: 99%

“…Past studies [11,12,15,17] have shown that, because of the viscosity, pulling rate, and heat extraction on the surface, an unstable meniscus forms on the underside of the silicon crystal at the edge of the crucible. Consequently, the unstable meniscus generates a heat imbalance in the growth process, which thus results in an irregular lower surface.…”

Section: Analytical Modelmentioning

confidence: 99%

“…In 2011, Oliveros [12] designed an experiment that employed water instead of silicon to simulate the HRG process; he also developed a…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

Shen

Sun

et al. 2018

Crystals

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Abstract:We present a novel horizontal ribbon growth (HRG) process and a theoretical analysis of this method. Assuming that the existence of the meniscus is defined by diffuse growth, we determine analytically the thickness and height of the meniscus and an explicit expression for the performance of meniscus under different conditions. We then calculate the thermal profile in melt part, as well as the conditions under which the undercooling is sufficient around the solidification point. We find that diffuse growth is more sensitive to small initial thickness, and find the minimum length of the melt part to obtain undercooling. Finally, we calculate the change rule of solidification position by a variational approach, as well as the stability of the process under different conditions. We also give an expression to the instability of past HRG methods.

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Section: Heat Exchange Amount and Pulling Velocitysupporting

confidence: 93%

“…To express the function (9), we need to use the mathematical description that used by Oliveros [12].…”

Section: Discussionmentioning

confidence: 99%

Section: Analytical Modelmentioning

confidence: 99%

“…In 2011, Oliveros [12] designed an experiment that employed water instead of silicon to simulate the HRG process; he also developed a…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

Shen

Sun

et al. 2018

Crystals

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“…Zoutendyk was the first to propose a mathematical model for the horizontal ribbon growth process. 5 the growth interface was described and a relationship between the pull speed and crystal thickness was determined. 6,7 Alternatively, Rhodes ignored the impact of heat transfer by solving the twodimensional Euler equation to study the meniscus shape between the crucible and ribbon.…”

Section: Introductionmentioning

confidence: 99%

Simulating the horizontal growth process of silicon ribbon

et al. 2018

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In this paper, we present a solidification growth model that primarily describes the principal components of horizontal ribbon growth process, but also discusses the interaction between fluid flow and heat transfer, crystallization dynamics, and the effects of oxygen impurity distribution in melts, particularly with respect to the morphology of the interface. The effects of the jet cooling rate, pulling speed, and transfer coefficient on solute transport were studied. The results showed that a higher jet velocity produces a sharper temperature gradient at the interface and a stronger Marangoni effect, facilitates solute transport in the silicon melt, and promotes higher oxygen concentration in crystal. The stronger Marangoni convection causes more rapid oxygen transfer in the silicon melt and a higher oxygen concentration. Solidification front increases the downward flow velocity of the eddy current as the pulling speed is increased; this leads to a decrease in solute concentration at the interface. An increase in the downward flow of the vortex confluence facilitates the reduction of solute concentration in the crystal. An increase in the upward flow of the vortex confluence will increase the concentration in the crystal. The oxygen concentration is concentrated at the top and bottom of the silicon ribbon.

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Modeling and laboratory scale proof of concept of the horizontal ribbon growth process: Application to silicon wafer manufacturing

Cited by 2 publications

References 2 publications

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

Simulating the horizontal growth process of silicon ribbon

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