This paper describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3/ which can be manufactured by means of regular thin film technology in combination with microsystem technology. Fabrication concept, material deposition for some 10-/spl mu/m-thick layers and the properties of the deposited thermoelectric materials will be reported. First device properties for Peltier-coolers and thermogenerators will be shown as well as investigations on long term and cycling stability. Data on metal/semiconductor contact resistance were extracted form device data. Device characteristics like response time for a Peltier-cooler and power output for a thermogenerator will be compared to commercial devices
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