van der Waals (vdW) heterostructures are promising building blocks for future ultrathin electronics. Fabricating vdW heterostructures by stamping monolayers at arbitrary angles provides an additional range of flexibility to tailor the resulting properties than could be expected by direct growth. Here, we report fabrication and comprehensive characterizations of WSe2/WS2 bilayer heterojunctions with various twist angles that were synthesized by artificially stacking monolayers of WS2 and WSe2 grown by chemical vapor deposition. After annealing the WSe2/WS2 bilayers, Raman spectroscopy reveals interlayer coupling with the appearance of a mode at 309.4 cm(-1) that is sensitive to the number of WSe2 layers. This interlayer coupling is associated with substantial quenching of the intralayer photoluminescence. In addition, microabsorption spectroscopy of WSe2/WS2 bilayers revealed spectral broadening and shifts as well as a net ∼10% enhancement in integrated absorption strength across the visible spectrum with respect to the sum of the individual monolayer spectra. The observed broadening of the WSe2 A exciton absorption band in the bilayers suggests fast charge separation between the layers, which was supported by direct femtosecond pump-probe spectroscopy. Density functional calculations of the band structures of the bilayers at different twist angles and interlayer distances found robust type II heterojunctions at all twist angles, and predicted variations in band gap for particular atomistic arrangements. Although interlayer excitons were indicated using femtosecond pump-probe spectroscopy, photoluminescence and absorption spectroscopies did not show any evidence of them, suggesting that the interlayer exciton transition is very weak. However, the interlayer coupling for the WSe2/WS2 bilayer heterojunctions indicated by substantial PL quenching, enhanced absorption, and rapid charge transfer was found to be insensitive to the relative twist angle, indicating that stamping provides a robust approach to realize reliable optoelectronics.

The examination of nanoparticles allows study of some processes and mechanisms that are not as easily observed for films or other types of studies in which sample preparation artifacts have been the cause of some uncertainties. Microstructure of iron nanoparticles passivated with iron oxide shell was studied using high-resolution transmission electron microscopy and high-angle annular dark-field imaging in aberration-corrected scanning transmission electron microscopy. Voids were readily observed on both small single-crystal α-Fe nanoparticles formed in a sputtering process and the more complex particles created by reduction of an oxide by hydrogen. Although the formation of hollow spheres of nanoparticles has been engineered for Co at higher temperatures [Y. Yin, R. M. Riou, C. K. Erdonmez, S. Hughes, G. A. Somorjari, and A. P. Alivisatos, Science 304, 711 (2004)], they occur for iron at room temperature and provide insight into the initial oxidation processes of iron. There exists a critical size of ∼8nm for which the iron has been fully oxidized, leading to a hollow iron-oxide nanoparticle. For particles larger than the critical size, an iron/iron-oxide core-shell structure was formed and voids reside at the interface between the oxide shell and the iron core. The present observation provides new insight for tailoring of metal/metal-oxide core-shell structured nanoparticles for applications related to optics, magnetism, and nanoelectronics.

Imperfections in organometal halide perovskite films such as grain boundaries (GBs), defects, and traps detrimentally cause significant nonradiative recombination energy loss and decreased power conversion efficiency (PCE) in solar cells. Here, a simple layer-by-layer fabrication process based on air exposure followed by thermal annealing is reported to grow perovskite films with large, single-crystal grains and vertically oriented GBs. The hole-transport medium Spiro-OMeTAD is then infiltrated into the GBs to form vertically aligned bulk heterojunctions. Due to the space-charge regions in the vicinity of GBs, the nonradiative recombination in GBs is significantly suppressed. The GBs become active carrier collection channels. Thus, the internal quantum efficiencies of the devices approach 100% in the visible spectrum range. The optimized cells yield an average PCE of 16.3 ± 0.9%, comparable to the best solution-processed perovskite devices, establishing them as important alternatives to growing ideal single crystal thin films in the pursuit toward theoretical maximum PCE with industrially realistic processing techniques.

We present a facile method to grow millimeter-size, hexagon-shaped, monolayer, single-crystal graphene domains on commercial metal foils. After a brief in situ treatment, namely, melting and subsequent resolidification of copper at atmospheric pressure, a smooth surface is obtained, resulting in the low nucleation density necessary for the growth of large-size single-crystal graphene domains. Comparison with other pretreatment methods reveals the importance of copper surface morphology and the critical role of the melting-resolidification pretreatment. The effect of important growth process parameters is also studied to determine their roles in achieving low nucleation density. Insight into the growth mechanism has thus been gained. Raman spectroscopy and selected area electron diffraction confirm that the synthesized millimeter-size graphene domains are high-quality monolayer single crystals with zigzag edge terminations.

The dynamics of nanoparticle formation, transport, and deposition by pulsed laser ablation of c-Si into 1-10 Torr He and Ar gases are revealed by imaging laser-induced photoluminescence and Rayleigh-scattered light from gas-suspended 1-10 nm SiO x particles. Two sets of dynamic phenomena are presented for times up to 15 s after KrF-laser ablation. Ablation of Si into heavier Ar results in a uniform, stationary plume of nanoparticles, while Si ablation into lighter He results in a turbulent ring of particles which propagates forward at 10 m/s. Nanoparticles unambiguously formed in the gas phase were collected on transmission electron microscope grids for Z-contrast imaging and electron energy loss spectroscopy analysis. The effects of gas flow on nanoparticle formation, photoluminescence, and collection are described.

Catastrophic brittle fracture of crystalline materials is one of the best documented but most poorly understood fundamental phenomena in materials science. Embrittlement of copper by bismuth is a classic example of this phenomenon. Because brittle fracture in any structural material can involve human tragedy, a better understanding of the mechanisms behind it is of the highest interest. In this study, we use a combination of two state-of-the-art atomic characterization techniques and ab initio theoretical materials simulations to investigate the geometric and electronic structure of a copper grain boundary with and without bismuth. Only with this unique combination of methods are we able to observe the actual distribution of bismuth in the boundary and detect changes in the electronic structure caused by the bismuth impurity. We find that the copper atoms that surround the segregated bismuth in the grain boundary become embrittled by taking on a more zinc-like electronic structure.

A universal method is reported to form graded bulk heterojunction (BHJ) organic photovoltaic devices (OPVs) by a simple solvent-fluxing process. Donors are enriched at the anode and acceptors are enriched at cathode side, matching the gradient electron and hole current across the film. Efficiency enhancements by 15-50% are achieved for all BHJ systems tested compared with the optimized regular BHJ OPVs.

Defect engineering has been a critical step in controlling the transport characteristics of electronic devices, and the ability to create, tune, and annihilate defects is essential to enable the range of next-generation devices. Whereas defect formation has been well-demonstrated in three-dimensional semiconductors, similar exploration of the heterogeneity in atomically thin two-dimensional semiconductors and the link between their atomic structures, defects, and properties has not yet been extensively studied. Here, we demonstrate the growth of MoSe2-x single crystals with selenium (Se) vacancies far beyond intrinsic levels, up to ∼20%, that exhibit a remarkable transition in electrical transport properties from n- to p-type character with increasing Se vacancy concentration. A new defect-activated phonon band at ∼250 cm(-1) appears, and the A1g Raman characteristic mode at 240 cm(-1) softens toward ∼230 cm(-1) which serves as a fingerprint of vacancy concentration in the crystals. We show that post-selenization using pulsed laser evaporated Se atoms can repair Se-vacant sites to nearly recover the properties of the pristine crystals. First-principles calculations reveal the underlying mechanisms for the corresponding vacancy-induced electrical and optical transitions.