Polymorph conversion of transition metal dichalcogenides (TMDs) offers intriguing material phenomena that can be applied for tuning the intrinsic properties of 2D materials. In general, group VIB TMDs can have thermodynamically stable 2H phases and metastable 1T/T′ phases. Herein, we report key principles to apply carbon monoxide (CO)-based gas–solid reactions for a universal polymorph conversion of group VIB TMDs without forming undesirable compounds. We found that the process conditions are strongly dependent on the reaction chemical potential of cations in the TMDs, which can be predicted by thermodynamic calculations, and that polymorphic conversion is triggered by S vacancy (VS) formation. Furthermore, we conducted DFT calculations for the reaction barriers of VS formation and S diffusion to reveal the polymorph conversion mechanism of WS2 and compared it with that of MoS2. We believe that phase engineering 2D materials via thermodynamically designed gas–solid reactions could be functionally used to achieve defect-related nanomaterials.

With recent rapid increases in Cu resistivity, RC delay has become an important issue again. Co, which has a low electron mean free path, is being studied as beyond Cu metal and is expected to minimize this increase in resistivity. However, extrinsic time-dependent dielectric breakdown has been reported for Co interconnects. Therefore, it is necessary to apply a diffusion barrier, such as the Ta/TaN system, to increase interconnect lifetimes. In addition, an ultrathin diffusion barrier should be formed to occupy as little area as possible. This study provides a thermodynamic design for a self-forming barrier that provides reliability with Co interconnects. Since Cr, Mn, Sn, and Zn dopants exhibited surface diffusion or interfacial stable phases, the model constituted an effective alloy design. In the Co-Cr alloy, Cr diffused into the dielectric interface and reacted with oxygen to provide a self-forming diffusion barrier comprising Cr2O3. In a breakdown voltage test, the Co-Cr alloy showed a breakdown voltage more than 200% higher than that of pure Co. The 1.2 nm ultrathin Cr2O3 self-forming barrier will replace the current bilayer barrier system and contribute greatly to lowering the RC delay. It will realize high-performance Co interconnects with robust reliability in the future.